DSEC30-06A

DSEC30-06A HiPerFRED VRRM = I FAV = 2x 15 A t rr = 35 ns 600 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-06A Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEC30-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 100 µA VR = 600 V TVJ = 150°C 0,5 mA TVJ = 25°C 2,03 V 2,24 V 1,34 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 150 °C TC = 140°C 1,57 V T VJ = 175°C 15 A TVJ = 175°C 0,99 V 14,3 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 5 A t rr reverse recovery time rectangular d = 0.5 for power loss calculation only 1,6 K/W IF = 15 A; VR = 300 V -di F /dt = 200 A/µs EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·V R typ.: f = 10 kHz IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved K/W 0,25 TC = 25°C 1A L = 180 µH 95 110 W A TVJ = 100°C 7 A TVJ = 25 °C 35 ns TVJ = 100°C 95 ns TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified 0,1 mJ 0,1 A 20220608d DSEC30-06A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSEC30-06A Similar Part DSEC30-06B DSEC29-06AC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEC30-06A Package TO-247AD (3) ISOPLUS220AB (3) * on die level Delivery Mode Tube Code No. 473502 Voltage class 600 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0,99 V R0 max slope resistance * 11,7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEC30-06A Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEC30-06A Fast Diode 40 2000 40 TVJ = 100°C VR = 300 V TVJ = 150°C 100°C 25°C 30 TVJ = 100°C VR = 300 V 1500 IF 30 Qr 20 IF = 30A 15 A 7.5 A 1000 [A] [μC] 10 20 [A] 500 0 0 1 10 0 100 2 0 1000 2.0 0 200 400 600 800 1000 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt VF [V] Fig. 1 Forward current IF versus VF IF = 30A 15 A 7.5 A IRM 120 20 TVJ = 100°C VR = 300 V 1.6 TVJ = 100°C IF = 15 A V 110 1.5 15 trr Kf 1.0 100 1.2 trr VFR IF = 30A 15 A 7.5 A 10 0.8 [V] [ns] 90 [μs] IRM 0.5 5 0.0 VFR 70 0 40 0.4 80 Qr 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 0 -diF /dt [A/μs] 200 400 600 800 0.0 1000 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ trr Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 10 Constants for ZthJC calculation: 1 ZthJC i Rthi (K/W) ti (s) 1 0.908 0.0052 0.1 2 0.350 0.0003 [K/W] 3 0.342 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d