DSEC30-06B
HiPerFRED
VRRM
=
I FAV
= 2x
15 A
t rr
=
25 ns
600 V
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSEC30-06B
Backside: cathode
1
2
3
Features / Advantages:
Applications:
Package: TO-247
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220610e
DSEC30-06B
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
600
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
max. Unit
600
V
V
VR = 600 V
TVJ = 25°C
100
µA
VR = 600 V
TVJ = 150°C
0,5
mA
TVJ = 25°C
2,53
V
2,97
V
1,58
V
IF =
15 A
IF =
30 A
IF =
15 A
IF =
30 A
TVJ = 150 °C
TC = 130°C
2,02
V
T VJ = 175°C
15
A
TVJ = 175°C
0,98
V
27
mΩ
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
12
pF
I RM
max. reverse recovery current
TVJ = 25 °C
2
A
t rr
reverse recovery time
rectangular
d = 0.5
for power loss calculation only
1,6 K/W
IF =
15 A; VR = 300 V
-di F /dt = 200 A/µs
EAS
non-repetitive avalanche energy
I AS =
I AR
repetitive avalanche current
VA = 1.5·V R typ.: f = 10 kHz
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
K/W
0,25
TC = 25°C
1A
L = 180 µH
95
110
W
A
TVJ = 100°C
3
A
TVJ = 25 °C
25
ns
TVJ = 100°C
80
ns
TVJ = 25 °C
Data according to IEC 60747and per semiconductor unless otherwise specified
0,1
mJ
0,1
A
20220610e
DSEC30-06B
Package
Ratings
TO-247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
50
Unit
A
-55
175
°C
-55
150
°C
150
°C
1)
6
Weight
MD
mounting torque
FC
mounting force with clip
g
0,8
1,2
Nm
20
120
N
Product Marking
IXYS
Logo
XXXXXXXXX
Part Number
Date Code
yywwZ
1234
Lot#
Location
Ordering
Standard
Ordering Number
DSEC30-06B
Similar Part
DSEC30-06A
DSEC29-06AC
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSEC30-06B
Package
TO-247AD (3)
ISOPLUS220AB (3)
* on die level
Delivery Mode
Tube
Code No.
492647
Voltage class
600
600
T VJ = 175 °C
Fast
Diode
V 0 max
threshold voltage
0,98
V
R0 max
slope resistance *
24,5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Quantity
30
Data according to IEC 60747and per semiconductor unless otherwise specified
20220610e
DSEC30-06B
Outlines TO-247
A
E
A2
Ø P1
ØP
D2
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
3x b
b4
C
A1
2x e
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
2
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20220610e
DSEC30-06B
Fast Diode
50
350
IF = 15 A
8
TVJ = 150°C
IF 30
IF = 30 A
VR = 300 V
300
40
10
TVJ = 100°C
250
Qr 200
TVJ = 100°C
IF = 7.5 A
IF = 30 A
IRM 6
IF = 15 A
IF = 7.5 A
[nC] 150
[A] 20
TVJ = 100°C
100
TVJ = 25°C
10
[A] 4
VR = 300 V
2
50
0
0
1
2
3
0
100
4
0
1000
VF [V]
0
200
-diF /dt [A/µs]
Fig. 1 Forward current
IF versus VF
Fig. 2 Reverse recov. charge
Qr versus -diF /dt
2.0
120
400
600
800
1000
-diF /dt [A/µs]
Fig. 3 Peak reverse current
IRM versus -diF /dt
TVJ = 100°C
VR = 300 V
60
0.30
50
0.25
40
0.20
100
1.5
trr
IF = 30 A
80
Kf 1.0
VFR
IF = 15 A
[ns]
IF = 7.5 A
0.15
[µs]
I F = 15 A
[V]
60
IRM
trr
TVJ = 100°C
30
20
tfr
VFR
0.5
10
0.05
40
Qr
0.0
0
0
0.10
40
80
120
160
0
TVJ [°C]
200
400
600
800
1000
0
200
600
800
0.00
1000
-diF /dt [A/µs]
-diF /dt [A/µs]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
400
Fig. 6 Peak forward voltage
VFR and tfr versus diF /dt
Fig. 5 Recovery time
trr versus -diF /dt
10
1
ZthJC
0.1
Constants for ZthJC calculation:
[K/W]
i
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Rthi (K/W)
ti (s)
1 0.908
0.005
2 0.350
0.0003
3 0.342
0.017
t [s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220610e
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