DSEC60-02A

DSEC 60-02A HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C A TO-247 AD A C A DSEC 60-02A C (TAB) A = Anode, C = Cathode, TAB = Cathode Maximum Ratings TC = 145°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine 70 30 325 A A A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 0.8...1.2 20...120 Nm N 6 g Md FC mounting torque mounting force with clip Weight typical Symbol Conditions -o s TC = 25°C ① VF ② Characteristic Values typ. max. VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 150°C 10 200 µA µA IF = 30 A; 0.95 1.20 V V 0.9 K/W K/W p IR h a Ptot mJ e TVJ TVJM Tstg TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs; TVJ = 100°C 25 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ns 4 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch A Recommended replacement: DPF60C200HB DPF80C200HB 502 IFRMS IFAVM IFSM Features t Conditions u Symbol 1-2 DSEC 60-02A 500 A 25 TVJ = 100°C nC 60 TVJ = 100°C A VR = 100 V 400 VR = 100 V 20 IRM IF Qr 300 TVJ = 150°C TVJ = 100°C TVJ = 25°C 40 IF = 60 A IF = 60 A IF = 30 A 15 IF = 30 A IF = 15 A IF = 15 A 200 10 100 5 20 0.5 1.0 VF V 0 100 1.5 Fig.1 Forward current IF vs. forward voltage drop VF 0 A/µs 1000 -diF/dt Fig.2 Reverse recovery charge Qrr versus -diF/dt 60 ns 1.4 trr 50 40 IF = 60A 0.8 IRM 14 VFR Qr 0.2 e IF = 15A 80 120 °C 160 TVJ h Fig.4 Dynamic parameters Qrr; IRM versus Tvj 0 a 40 p 30 3.7 12 3.6 10 3.5 tfr 3.4 tfr 3.3 VFR 4 400 600 800 1000 A/µs 0 200 400 -diF/dt 3.2 600 A/µs 800 1000 diF/dt Fig.6 Peak forward voltage VFR & forw. recov. time tfr vs. -diF/dt Fig.5 Reverse recovery time trr versus -diF/dt NOTE: Fig. 2 to Fig. 6 shows typical values 1 µJ TVJ = 100°C 25 K/W VR = 100 V IF = 30 A 0.1 20 200 µs VR = 100 V IF = 30 A 6 20 0 TVJ = 100°C 8 IF = 30A 30 s 0.6 600 A/µs 800 1000 -diF/dt 3.8 V VR = 100 V Kf 1.2 1.0 400 16 TVJ = 100°C u 1.6 200 Fig.3 Peak reverse current IRM versus -diF/d -o 1.8 0.4 0 t 0 0.0 ZthJC 15 Constants for ZthJC calculation: 0.01 i 10 1 2 3 0.001 5 0 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 7 Recovery energy Erec versus -diF/dt 0.0001 0.00001 ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 DSEC 60-02A 0.0001 0.001 0.01 s 0.1 1 t Fig.8 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Rthi (K/W) 502 Erec 2-2