DSEC60-02AQ

DSEC 60-02AQ IFAV = 2x30 A VRRM = 200 V trr = 25 ns FRED for PDP Applications with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C TO-3 P A C (TAB) A DSEC 60-02AQ C A = Anode, C = Cathode Maximum Ratings IFRMS IFAVM IFSM TC = 145°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive Md FC mounting torque mounting force with clip Weight typical Symbol Conditions VF ② RthJC RthCH mJ 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 0.8...1.2 20...120 Nm N 5.2 g Characteristic Values typ. max. VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 150°C 3 200 µA µA IF = 30 A; 0.95 1.20 V V 0.9 K/W K/W No t ① 1.2 ne TC = 25°C fo r Ptot IR A A A w TVJ TVJM Tstg 70 30 325 TVJ = 150°C TVJ = 25°C trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs; TVJ = 100°C 0.25 25 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ns 4 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch A Recommended replacement: DPG 60C200QB 20070605b Conditions de s Symbol ig n A 1-2 DSEC 60-02AQ 60 800 600 nC A 30 20 TVJ = 100°C VR = 100 V VR = 100 V 24 600 450 IF TVJ = 100°C A IRM Qr 40 TVJ=100°C IF = 60 A IF = 60 A TVJ=150°C 400 300 IF = 30 A 18 IF = 15 A 10 TVJ= 25°C IF = 30 A IF = 15 A 12 20 150 200 6 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF vs. VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 80 trr 400 Fig. 3 Peak reverse current IRM versus -diF/dt TVJ = 100°C V VR = 100 V 70 IF = 30 A 12 VFR Kf 600 A/µs 800 1000 -diF/dt 13 TVJ = 100°C ns 1.2 200 de s 1.4 0 n 0.5 ig 0 0.0 tfr 60 IRM 0.8 w IF = 60A IF = 30A 50 IF = 15A ne Qr 0.6 40 0.4 30 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ K/W 0.1 ZthJC 0.01 200 400 VFR 10 0.75 9 0.50 8 0.25 7 600 800 1000 A/µs 0 200 -diF/dt Fig. 5 Recovery time trr vs. -diF/dt 400 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: No t 1 0 fo r 0 µs 1.25 tfr 1.00 11 1.0 1.50 i 1 2 3 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.001 0.0001 0.00001 DSEC 60-02A 0.0001 0.001 0.01 s 0.1 1 NOTE: Fig. 2 to Fig. 6 shows typical values t IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070605b Fig. 7 Transient thermal resistance junction to case 2-2