DSEC60-03AR

DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A ISOPLUS 247TM A DSEC 60-03AR A C Isolated back surface gn A A = Anode, C = Cathode Maximum Ratings TC = 135°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive TC = 25°C FC mounting force with clip VISOL 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical Symbol Conditions IF = 30 A; 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 20...120 N 2500 V~ 6 g r Characteristic Values typ. max. TVJ = 150°C TVJ = 25°C No RthJC RthCH mJ fo VF ② A 1.2 VR = VRRM; TVJ = 25°C TVJ = 150°C t ① 300 ne Ptot IR A A w TVJ TVJM Tstg 70 30 trr IF = 1 A; -di/dt = 200 A/µs VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 10 1 µA mA 0.91 1.25 V V 1.1 K/W K/W 0.25 30 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 µs, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. © 2007 IXYS All rights reserved • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 ns 7 A Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG 60C300HJ 20070605a IFRMS IFAVM Features si Conditions de Symbol 1-2 DSEC 60-03AR 60 800 30 TVJ = 100°C nC A VR = 150V IRM Qr 40 VR = 150V 25 600 IF TVJ = 100°C A 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A TVJ=100°C 400 IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF 0 A/s 1000 -diF/dt 0 90 trr 80 VFR Kf TVJ = 100°C V VR = 150V de 1.2 14 TVJ = 100°C ns 600 A/s 800 1000 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 200 si 0 0.0 gn 5 IF = 30A 70 IRM w 60 IF = 15A 50 0.4 ne 0.6 80 120 °C 160 TVJ 0 200 400 0.2 8 600 800 1000 A/s 0 200 400 r 0.0 600 A/s 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt fo Fig. 5 Recovery time trr versus -diF/dt Constants for ZthJC calculation: i 1 2 3 4 No t 0.1 ZthJC 0.4 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.6 10 40 40 tfr VFR IF = 30A Qr 0 0.8 IF = 60A 0.8 s 1.0 tfr 12 1.0 1.2 0.01 Rthi (K/W) ti (s) 0.368 0.1417 0.0295 0.5604 0.0052 0.0003 0.0004 0.0092 0.001 0.0001 0.00001 DSEC 60-03AR 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, Conditions and dimensions. © 2007 IXYS All rights reserved 20070605a t 2-2