DSEC60-04A

DSEC 60-04A HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery Preliminary Data VRSM VRRM V V 400 400 A Type C A TO-247 AD A C A DSEC 60-04A C (TAB) D4 Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = tbd A; L = tbd µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive TC = 25°C Md mounting torque Weight typical Symbol Conditions A tbd mJ tbd A RthJC RthCH °C °C °C 165 W 0.8...1.2 6 fo Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 µA mA IF = 30 A; 1.09 1.49 V V 0.9 K/W K/W No t ① VF ② IRM tbd -55...+175 175 -55...+150 r Ptot trr A A ne TVJ TVJM Tstg IR 70 30 Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 de s Conditions w Symbol ig n A = Anode, C = Cathode, TAB = Cathode TVJ = 150°C TVJ = 25°C 0.25 IF = 1 A; -di/dt = 300 A/µs; VR = 30 V; TVJ = 25°C 30 VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 5.5 6.8 A • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG 60C400HB IXYS reserves the right to change limits, test conditions and dimensions. 20071025a Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % ns Applications © 2007 IXYS All rights reserved 1-2 Data according to IEC 60747 and per diode unless otherwise specified DSEC 60-04A 70 A 60 1600 50 TVJ= 100°C VR = 200V nC IRM 1200 IF 50 40 Qr TVJ=150°C TVJ=100°C TVJ= 25°C 40 TVJ= 100°C VR = 200V A 800 30 20 30 IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A 20 400 10 10 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF 2.0 0 100 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 IF= 60A IF= 30A IF= 15A ne 60 Qr 50 40 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 fo 0 r 0.0 400 800 1000 A/µs 1 0.1 ZthJC 0.4 VFR 5 0.2 0 200 400 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: No t K/W tfr -diF/dt Fig. 5 Recovery time trr versus -diF/dt µs tfr 0 600 0.6 TVJ= 100°C IF = 30A 10 w 70 IRM 0.5 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt VFR Kf 1.0 400 V trr 80 1.5 200 15 TVJ= 100°C VR = 200V ns 0 ig n 0.5 de s 0 0.0 i 1 2 3 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396 0.01 0.001 0.00001 DSEP 30-04A / DSEC 60-04A 0.0001 0.001 0.01 s 0.1 1 Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 2-2 20071025a t © 2007 IXYS All rights reserved