DSEC60-06B

DSEC60-06B HiPerFRED VRRM = I FAV = 2x 30 A t rr = 25 ns 600 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC60-06B Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEC60-06B Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 250 µA VR = 600 V TVJ = 150°C 2 mA IF = 30 A TVJ = 25°C 2.51 V IF = 60 A 3.19 V IF = 30 A 1.61 V IF = 60 A TVJ = 150 °C TC = 120 °C rectangular 2.24 V T VJ = 175 °C 30 A TVJ = 175 °C 0.84 V 19.6 mΩ d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 26 pF TVJ = 25 °C 2.5 A TVJ = 100 °C 4.5 A TVJ = 25 °C 25 ns TVJ = 100 °C 70 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 30 A; VR = 300 V -di F /dt = 200 A/µs 165 250 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20210118b DSEC60-06B Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSEC60-06B Similar Part DSEC60-06A DSEC59-06BC DHG60C600HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEC60-06B Package TO-247AD (3) ISOPLUS220AB (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 475300 Voltage class 600 600 600 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.84 V R0 max slope resistance * 2.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEC60-06B Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEC60-06B Fast Diode 100 600 IF = 60 A VR = 300 V 500 80 20 TVJ = 100°C IF = 30 A 16 TVJ = 150°C IF = 15 A 400 IF 60 IRM IF = 30 A 300 [A] 40 12 IF = 60 A Qr TVJ = 100°C IF = 15 A [nC] 8 20 0 0 1 2 3 0 100 4 VR = 300 V 4 100 TVJ = 25°C TVJ = 100°C [A] 200 0 1000 VF [V] 0 200 -diF /dt [A/µs] Fig. 1 Forward current IF versus VF 140 60 TVJ = 100°C VR = 300 V 120 600 800 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 -diF /dt [A/µs] 0.30 TVJ = 100°C IF = 30 A 50 0.25 1.5 IF = 60 A 100 IF = 30 A trr Kf 1.0 IF = 15 A 80 0.20 30 0.15 tfr [µs] [V] [ns] 0.5 40 VFR 20 IRM 60 Qr 40 tfr VFR 10 0.0 0.05 0 0 40 80 120 160 0 TVJ [°C] 200 400 600 800 1000 0 200 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.10 400 600 800 0.00 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 10 1 ZthJC Constants for ZthJC calculation: 0.1 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b