DSEE15-06CC

DSEE15-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 15 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM V V 600 300 Symbol ISOPLUS 220 E153432 Type DSEE15-06CC 1 Conditions 2 3 Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -55...+175 175 -55...+150 °C °C °C TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting force Weight typical w Ptot 260 IR d TVJ = 25°C t Conditions No Symbol W 2500 V~ 11...65 / 2.5...15 N / lb 2 g Characteristic Values typ. max. 100 µA 0.5 mA 1.25 1.7 V V 1.6 0.6 K/W K/W IF = 1 A; -di/dt = 200 A/µs; VR = 30 V 30 ns VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 2 IF = 15 A; z VR = VRRM TVJ = 125°C TVJ = 25°C RthJC RthCH z z z z z z z z z z z z z IRM z 2.7 Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Diodes connected in series d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % © 2003 IXYS All rights reserved A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages z trr Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (