DSEE15-12CC

DSEE15-12CC HiPerFRED VRRM = 2x 600 V I FAV = 15 A t rr = 25 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DSEE15-12CC Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DSEE15-12CC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VR = 600 V TVJ = 25°C 100 µA VR = 600 V TVJ = 150°C 0.5 mA IF = 15 A TVJ = 25°C 2.04 V IF = 30 A 2.25 V IF = 15 A 1.35 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. TVJ = 150 °C TC = 140 °C rectangular max. Unit 600 V V 1.59 V T VJ = 175 °C 15 A TVJ = 175 °C 0.99 V 15 mΩ d = 0.5 for power loss calculation only 1.6 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 12 pF TVJ = 25 °C 11 A TVJ = 100 °C 19 A TVJ = 25 °C 25 ns TVJ = 100 °C 83 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 15 A; VR = 300 V -di F /dt = 600 A/µs 95 110 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211c DSEE15-12CC Package Ratings ISOPLUS220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 60 N terminal to terminal 1.0 mm terminal to backside 3.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL Logo IXYS ® ISOPLUS® Part Number Date Code Location Lot# XXXXXXXXX yywwZ 1234 Ordering Standard Ordering Number DSEE15-12CC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEE15-12CC * on die level Delivery Mode Tube Code No. 500725 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.99 V R0 max slope resistance * 11.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DSEE15-12CC E A A2 D2 Outlines ISOPLUS220 E1 T Dim. D1 D3 D 2 3 2x b2 L L1 1 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 T° W 3x b c 2x e b4 A1 Millimeters min max 4.00 5.00 2.50 3.00 1.60 1.80 0.90 1.30 2.35 2.55 1.25 1.65 0.70 1.00 15.00 16.00 12.00 13.00 1.10 1.50 14.90 15.50 10.00 11.00 7.50 8.50 2.54 BSC 13.00 14.50 3.00 3.50 42.5 47.5 0.1 Inches min max 0.157 0.197 0.098 0.118 0.063 0.071 0.035 0.051 0.093 0.100 0.049 0.065 0.028 0.039 0.591 0.630 0.472 0.512 0.043 0.059 0.587 0.610 0.394 0.433 0.295 0.335 0.100 BSC 0.512 0.571 0.118 0.138 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DSEE15-12CC Fast Diode 40 2000 40 TVJ = 100°C VR = 300 V TVJ = 150°C 30 VR = 300 V 1500 IF 30 IF = 30 A 1000 100°C 10 [A] 7.5 A [nC] 500 0 0 1 10 0 100 2 15 A 7.5 A 20 15 A 25°C [A] IF = 30 A IRM Qr 20 TVJ = 100°C 0 1000 0 200 -diF /dt [A/µs] VF [V] 2.0 120 600 800 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF vs. VF 400 -diF /dt [A/µs] 20 TVJ = 100°C 1.6 TVJ = 100°C VR = 300 V IF 110 1.5 = 15 A 15 VFR 100 trr Kf 1.0 1.2 IF = 30 A 10 [ns] 90 IRM tfr 0.8 [V] 15 A 0.5 [µs] 5 80 Qr 0.0 70 0 40 80 120 160 0.4 VFR 7.5 A trr 0 0 200 400 600 800 1000 0 200 800 0.0 1000 Fig. 6 Typ. peak forward voltage VFR Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 -diF /dt [A/µs] -diF /dt [A/µs] TVJ [°C] 400 and typ. forward recovery time tfr versus diF /dt 10 Constants for Z thJC calculation: i Rthi [K/W] ZthJC ti [s] 1 1 0.908 0.0052 [K/W] 2 0.350 0.0003 3 0.342 0.0170 0.1 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c