DSEE29-06CC

DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Maximum Ratings IFRMS IFAVM c TC = 115°C; rectangular, d = 0.5 60 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting force Weight typical TVJ = 25°C r fo IRd t Conditions W 2500 V~ 11...65 / 2.5...15 N / lb 2 VF Characteristic Values typ. max. VR = VRRM µA 1 mA 1.01 1.26 V V 0.9 0.6 K/W K/W IF = 1 A; -di/dt = 200 A/µs; VR = 30 V 30 ns VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 4.5 TVJ = 125°C TVJ = 25°C RthJC RthCH trr IRM g 100 IF = 30 A; z z z z z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (