DSEE29-12CC
HiPerFRED
VRRM
= 2x 600 V
I FAV
=
30 A
t rr
=
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DSEE29-12CC
Backside: isolated
1
2
3
Features / Advantages:
Applications:
Package: ISOPLUS220
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211c
DSEE29-12CC
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
600
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
600
V
V
VR = 600 V
TVJ = 25°C
500
µA
VR = 600 V
TVJ = 150°C
1
mA
IF =
30 A
TVJ = 25°C
1.62
V
IF =
60 A
1.95
V
IF =
30 A
1.27
V
IF =
60 A
TVJ = 150 °C
TC = 130 °C
rectangular
1.58
V
T VJ = 175 °C
30
A
TVJ = 175 °C
1.00
V
10
mΩ
d = 0.5
for power loss calculation only
0.9 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 400 V f = 1 MHz
TVJ = 25°C
26
pF
TVJ = 25 °C
17
A
TVJ = 100 °C
29
A
TVJ = 25 °C
35
ns
TVJ = 100 °C
90
ns
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.5
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
30 A; VR = 300 V
-di F /dt = 600 A/µs
165
200
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
20200211c
DSEE29-12CC
Package
Ratings
ISOPLUS220
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
2
Weight
FC
20
mounting force with clip
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
t = 1 minute
60
N
terminal to terminal
1.0
mm
terminal to backside
3.0
mm
3600
V
3000
V
t = 1 second
isolation voltage
g
50/60 Hz, RMS; IISOL ≤ 1 mA
Product Marking
UL
Logo
IXYS
®
ISOPLUS®
Part Number
Date Code
Location
Lot#
XXXXXXXXX
yywwZ
1234
Ordering
Standard
Ordering Number
DSEE29-12CC
Similar Part
DSEE30-12A
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-247AD (3)
* on die level
Delivery Mode
Tube
Quantity
50
Code No.
500694
Voltage class
600
T VJ = 175°C
Fast
Diode
V 0 max
threshold voltage
1
R0 max
slope resistance *
6.2
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Marking on Product
DSEE29-12CC
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211c
DSEE29-12CC
E
A
A2
D2
Outlines ISOPLUS220
E1
T
Dim.
D1
D3
D
2
3
2x b2
L
L1
1
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
T°
W
3x b
c
2x e
b4
A1
Millimeters
min
max
4.00
5.00
2.50
3.00
1.60
1.80
0.90
1.30
2.35
2.55
1.25
1.65
0.70
1.00
15.00
16.00
12.00
13.00
1.10
1.50
14.90
15.50
10.00
11.00
7.50
8.50
2.54 BSC
13.00
14.50
3.00
3.50
42.5
47.5
0.1
Inches
min
max
0.157
0.197
0.098
0.118
0.063
0.071
0.035
0.051
0.093
0.100
0.049
0.065
0.028
0.039
0.591
0.630
0.472
0.512
0.043
0.059
0.587
0.610
0.394
0.433
0.295
0.335
0.100 BSC
0.512
0.571
0.118
0.138
-
0.004
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-273
gemäß JEDEC außer D und D1.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-273 except D and D1.
W
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
2
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211c
DSEE29-12CC
Fast Diode
70
3000
60
2500
A
TVJ = 100°C
40
VR = 300 V
TVJ = 150°C
50
IF
50
IF = 60 A
2000
Qr
40
TVJ = 100°C
[A] 30
[nC]
IF = 15 A
[A]
1000
20
20
TVJ = 100°C
10
500
10
IF = 15 A
IRM
IF = 30 A
1500
IF = 30 A
30
IF = 60 A
VR = 300 V
TVJ = 25°C
0
0.0
0.5
1.0
1.5
0
100
2.0
0
1000
VF [V]
0
Fig. 1 Forward current IF vs. VF
130
1000
1.2
TVJ = 100°C
IF = 30 A
IF = 60 A
15
0.9
10
0.6
IF = 30 A
110
tfr
VFR
IF = 15 A
trr
Kf 1.0
800
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
VR = 300 V
1.5
600
20
TVJ = 100°C
120
400
-diF /dt [A/µs]
Fig. 2 Typ. reverse recovery charge
Qr versus -diF /dt
2.0
100
[µs]
[V]
[ns]
90
IRM
0.5
200
-diF /dt [A/µs]
5
0.3
VFR
80
trr
Qr
0.0
70
0
40
80
120
160
0
0
200
TVJ [°C]
400
600
800
1000
0
200
-diF /dt [A/µs]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
400
600
800
0.0
1000
-diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage VFR
Fig. 5 Typ. recovery time
trr versus -diF /dt
and typ. forward recovery time
tfr versus diF /dt
1
Constants for ZthJC calculation:
ZthJC
i
0.1
[K/W]
0.01
0.001
Rthi (K/W)
ti (s)
1 0.038
0.00024
2 0.07
0.0036
3 0.245
0.0235
4 0.198
0.1421
5 0.35
0.25
DSEE 29-12CC
0.01
0.1
t [s]
1
10
t
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211c
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