DSEE30-12A

DSEE30-12A ADVANCE TECHNICAL INFORMATION HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc TO-247 AD VRRM V V 1200 600 Type DSEE30-12A 1 2 3 1 Symbol Conditions IFRMS IFAVM c TC = 90°C; rectangular, d = 0.5 60 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A EAS TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH 0.2 mJ IAR Features ● ● VA = 1.5· VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C TL 1.6 mm (0.063 in) from case for 10 s 260 °C Ptot TC = 25°C 165 W Md Mounting Torque 0.9/6 Weight typical 2 Nm/ lb.in. g ● ● ● ● ● ● ● Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C V R = VRRM 200 2 µA mA IF = 30 A; 1.75 2.5 V V 0.9 0.25 K/W K/W ● ● ● ● VF e TVJ = 125°C TVJ = 25°C RthJC RthCH IF = 1 A; -di/dt = 200 A/µs; VR = 30 V 30 ns IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 4 A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● trr Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications ● IRcd 3 Maximum Ratings TVJ TVJM Tstg Symbol 2 ● Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Notes Please see DSEP 30-06A Data Sheet for characteristic curves. ● Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Diodes connected in series d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved DS98962 (10/02) DSEE30-12A TO-247 AD Outline ∅ P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1