DSEE6-06CC

DSEE 6-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V trr = 20 ns VRRMc ISOPLUS 220 E153432 ISOPLUS220TM V V 600 300 Type DSEE 6-06CC 1 Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 2 3 Maximum Ratings 20 6 A A mJ TVJ = 25°C; non-repetitive IAS = 0.8 A; L = 180 µH 0.1 IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -40...+175 175 -40...+150 °C °C °C 50 W 2500 V~ VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting force Weight typical ne TC = 25°C w TVJ TVJM Tstg Ptot g VF e RthJC RthCH Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM fo r 2 IF = 10 A; λ λ λ λ λ λ Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (