DSEE8-06CC

DSEE8-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 600 300 Type ISOPLUS220TM 1 DSEE8-06CC 1 2 2 3 3 Isolated back surface * Symbol Conditions Maximum Ratings TC = 110°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 20 10 10 A A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 60 A EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH 0.5 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -55...+175 175 -55...+150 °C °C °C 60 W 2500 V~ IFRMS IFAVM IFRM * Patent pending Features l l l TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting force Weight typical l l l l l 11...65 / 2.4...11 N / lb 3 g Applications l l Symbol IR Q VF R Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; 60 0.2 µA mA 1.3 1.75 V V 2.5 0.6 K/W K/W ns TVJ = 125°C TVJ = 25°C RthJC RthCH Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (