DSEE8-06CC
ADVANCE TECHNICAL INFORMATION
HiPerDynFREDTM Epitaxial Diode
IFAV = 10 A
VRRM = 600 V
trr
= 30 ns
ISOPLUS220TM
Electrically Isolated Back Surface
VRRMQ
VRRM
V
V
600
300
Type
ISOPLUS220TM
1
DSEE8-06CC
1
2
2
3
3
Isolated back surface *
Symbol
Conditions
Maximum Ratings
TC = 110°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
20
10
10
A
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
60
A
EAS
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
0.5
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
-55...+175
175
-55...+150
°C
°C
°C
60
W
2500
V~
IFRMS
IFAVM
IFRM
* Patent pending
Features
l
l
l
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
FC
Mounting force
Weight
typical
l
l
l
l
l
11...65 / 2.4...11 N / lb
3
g
Applications
l
l
Symbol
IR
Q
VF R
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 10 A;
60
0.2
µA
mA
1.3
1.75
V
V
2.5
0.6
K/W
K/W
ns
TVJ = 125°C
TVJ = 25°C
RthJC
RthCH
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (
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