DSEE8-08CC

DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 60 A EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH 0.5 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 Features z z A z z TC = 25°C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC Mounting force Weight typical 55 W 2500 s a IR d TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM g z z Applications z z Characteristic Values typ. max. z z 60 0.25 µA mA 1.12 1.53 V V 2.75 0.6 K/W K/W ns TVJ = 125°C TVJ = 25°C RthJC RthCH z z p h Conditions 2 z V~ 11...65 / 2.4...11 N / lb Symbol IF = 10 A; °C °C °C e Ptot VF e -40...+175 175 -40...+150 -o TVJ TVJM Tstg z z z IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C 2 z 2.4 Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Diodes connected in series d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages z trr Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (