DSEI12-06A

DSEI12-06A FRED VRRM = 600 V I FAV = 14 A t rr = 35 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009a DSEI12-06A Ratings Fast Diode Conditions max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VR = 600 V TVJ = 25°C 50 µA VR = 480 V TVJ = 125°C 3 mA VF Definition min. Symbol VRSM forward voltage drop IF = 12 A IF = 24 A IF = 12 A IF = 24 A typ. TVJ = 25°C TVJ = 150 °C TC = 115 °C max. Unit 600 V V 1.62 V 1.80 V 1.43 V 1.69 V T VJ = 150 °C 14 A TVJ = 150 °C 1.21 V 18.9 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 2.5 A t rr reverse recovery time rectangular for power loss calculation only 1.6 K/W 0.50 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved d = 0.5 14 A; VR = 350 V -di F /dt = 100 A/µs K/W 62 100 W A TVJ = 100 °C 4 A TVJ = 25 °C 90 ns TVJ = 100 °C 150 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20201009a DSEI12-06A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 25 Unit A TVJ virtual junction temperature -40 150 °C T op operation temperature -40 125 °C Tstg storage temperature -40 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEI12-06A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI12-06A * on die level Delivery Mode Tube Code No. 434396 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.21 V R0 max slope resistance * 15.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20201009a DSEI12-06A Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20201009a DSEI12-06A Fast Diode 30 1.5 25 TVJ = 100°C VR = 50 V 25 TVJ = 100°C VR = 350 V 20 max 20 IF = 14 A 28 A 14 A 7A 1.0 IF = 14 A 28 A 14 A 7A Qr IF 15 TVJ = 150°C 100°C 25°C [A] 10 [µC] max IRM 15 [A] 10 0.5 5 5 typ. typ. 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 2.5 10 100 1000 0 100 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 1.4 0.5 0.4 1.0 trr 0.3 IF = 14 A 28 A 14 A 7A Kf [µs] 0.2 0.8 300 400 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 20 1000 16 800 TVJ = 100°C VR = 350 V max 1.2 200 -diF /dt [A/µs] VFR 12 600 TVJ = 125°C IF = 14 A [V] 8 tfr 400 [ns] 0.6 IRM 0.1 4 Qr VFR typ. 0.4 0.0 0 40 80 120 160 tfr 0 0 100 200 300 400 0 0 100 -diF /dt [A/µs] TVJ [°C] 200 300 400 diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 2.0 Constants for ZthJC calculation: 1.6 ZthJC i Rthi (K/W) ti (s) 1.2 1 0.100 0.001 [k/W] 0.8 2 0.020 0.010 3 0.400 0.180 4 0.400 0.024 5 0.680 0.003 0.4 0.0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009a