DSEI12-12A

DSEI12-12A FRED VRRM = 1200 V I FAV = 12 A t rr = 50 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e DSEI12-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V V VR = 1200 V TVJ = 25°C 250 µA VR = 960 V TVJ = 125°C 4 mA IF = 12 A TVJ = 25°C 2,58 V IF = 24 A 2,94 V IF = 12 A 2,23 V IF = 24 A TVJ = 150 °C TC = 100 °C rectangular 2,72 V T VJ = 150 °C 12 A TVJ = 150 °C 1,77 V 38 mΩ d = 0.5 for power loss calculation only 1,6 K/W 0,50 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 6 pF TVJ = 25 °C 4 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 11 A; VR = 540 V -di F /dt = 100 A/µs 78 75 W A TVJ = 100 °C 6 A TVJ = 25 °C 150 ns TVJ = 100 °C 300 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e DSEI12-12A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 25 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0,4 0,6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEI12-12A Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 50 Code No. 459801 T VJ = 150°C Fast Diode V 0 max threshold voltage 1,77 R0 max slope resistance * 35 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Marking on Product DSEI12-12A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e DSEI12-12A Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e DSEI12-12A Fast Diode 30 3,0 2,5 20 30 TVJ = 100°C VR = 540 V 25 [A] IF = 11 A 22 A 11 A 5.5 A Qr TVJ = 150°C 100°C 25°C 1,5 [µC] 10 0 IRM max. 15 [A] 1,0 10 0,5 5 0 0,0 1 2 3 1 VF [V] 10 100 0 1000 TVJ = 100°C VR = 540 V 0,8 1,0 0,6 trr Kf 0,8 max. 0,4 IRM IF = 11 A 22 A 11 A 5.5 A 400 60 1200 50 1000 40 800 VFR 30 20 0,2 tfr TVJ = 125°C IF = 11 A [V] [µs] Qr 300 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 1,0 1,2 200 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 1,4 0,4 100 -diF /dt [A/µs] Fig. 1 Forward current IF versus max. forward voltage drop VF 0,6 IF = 11 A max. 22 A 11 A 5.5 A 20 2,0 IF TVJ = 100°C VR = 540 V 600 [ns] tfr 10 400 200 VFR 0,2 0,0 0 40 80 120 160 0 0 100 200 300 400 0 100 -diF /dt [A/µs] TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 300 0 400 diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 2,0 Constants for ZthJC calculation: 1,6 1,2 ZthJC 0,8 [k/W] i Rthi (K/W) ti (s) 1 0.200 0.0018 2 0.220 0.0100 3 0.080 0.5000 4 0.300 0.0900 5 0.680 0.0300 0,4 0,0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721e