DSEI19-06AS-TRL

DSEI19-06AS FRED VRRM = 600 V I FAV = 20 A t rr = 35 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI19-06AS Marking on Product: DSEI19-06AS Backside: cathode 3 2/4 1 = not connected Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201012a DSEI19-06AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 50 µA VR = 480 V TVJ = 125°C 3 mA IF = 15 A TVJ = 25°C 1.67 V IF = 30 A 1.87 V IF = 15 A 1.51 V IF = 30 A TVJ = 150 °C TC = 90 °C rectangular 1.79 V T VJ = 150 °C 20 A TVJ = 150 °C 1.30 V 15.4 mΩ d = 0.5 for power loss calculation only 1.6 K/W 0.25 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 10 pF TVJ = 25 °C 2.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 14 A; VR = 350 V -di F /dt = 100 A/µs 62 100 W A TVJ = 100 °C 4 A TVJ = 25 °C 90 ns TVJ = 100 °C 150 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20201012a DSEI19-06AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 25 Unit A -40 150 °C -40 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSEI19-06AS-TRL DSEI19-06AS-TUB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI19-06AS DSEI19-06AS * on die level Delivery Mode Tape & Reel Tube Code No. 499455 464570 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.3 V R0 max slope resistance * 12.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20201012a DSEI19-06AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 3 2/4 1 = not connected IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201012a DSEI19-06AS Fast Diode 40 1.5 25 TVJ = 100°C VR = 50 V TVJ = 100°C VR = 350 V 20 max 30 IF = 14 A 28 A 14 A 7A 1.0 IF = 14 A 28 A 14 A 7A Qr IF TVJ = 150°C 100°C 25°C 20 [A] [µC] max IRM 15 [A] 10 0.5 10 5 typ. typ. 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 2.5 10 1.4 1000 100 200 300 400 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 0.5 0.4 1.0 trr 0.3 20 1000 16 800 TVJ = 100°C VR = 350 V max 1.2 IF = 14 A 28 A 14 A 7A Kf [µs] 0.2 0.8 0 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF 100 VFR 12 600 TVJ = 125°C IF = 14 A [V] 8 tfr 400 [ns] 0.6 IRM 0.1 4 Qr VFR typ. 0.4 0.0 0 40 80 120 TVJ [°C] 160 tfr 0 0 100 200 300 400 0 0 100 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 200 300 400 diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1.6 Constants for ZthJC calculation: 1.2 ZthJC i Rthi (K/W) ti (s) 1 0.100 0.001 0.8 2 0.020 0.010 [k/W] 3 0.400 0.180 0.4 4 0.400 0.024 5 0.680 0.003 0.0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201012a