DSEI19-06AS

DSEI 19-06AS VRRM = 600 V IFAVM = 20 A trr = 35 ns Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 600 600 A Type C TO-263 AA NC A DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 65°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 25 20 150 A A A IFSM TVJ = 45°C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 100 110 A A TVJ = 150°C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 85 95 A A TVJ = 45°C t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 50 50 A2s A2s TVJ = 150°C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine 36 37 A2s A2s -40...+150 150 -40...+150 °C °C °C 61 W 2 g TVJ TVJM Tstg Ptot TC = 25°C Weight Symbol Conditions Features ● ● ● ● ● ● ● International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TO-263 AA Outline Characteristic Values typ. max. IR TVJ = 25°C; VR = VRRM TVJ = 25°C; VR = 0.8 • VRRM TVJ = 125°C; VR = 0.8 • VRRM 50 25 3 µA µA mA VF IF = 16 A; 1.5 1.7 V V Dim. VT0 rT For power-loss calculations only TVJ = TVJM 1.12 23.2 V mΩ Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 2 K/W b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 35 50 ns c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 4 4.4 A D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TVJ = 150°C TVJ= 25°C RthJC trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 350 V; IF = 12 A; -diF/dt = 100 A/µs L ≤ 0.05 µH; TVJ = 100°C ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 417 I2t Maximum Ratings 1-2 DSEI 19-06AS Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. IXYS reserves the right to change limits, test conditions and dimensions 2-2 417 Fig. 7 Transient thermal impedance junction to case. © 2004 IXYS All rights reserved Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DSEI19-06AS DSEI19-06AS-TUB DSEI19-06AS-TRL