DSEI2X101-06A

DSEI2x101-06A FRED VRRM = 600 V I FAV = 2x 96 A t rr = 35 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. TVJ = 25°C 3 mA TVJ = 125°C 20 mA I F = 100 A TVJ = 25°C 1.25 V 1.40 V 1.17 V TVJ = 150 °C I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 600 V I F = 100 A average forward current 600 VR = 480 V I F = 200 A I FAV max. Unit 600 V TC = 70 °C rectangular 1.70 V T VJ = 150 °C 96 A TVJ = 150 °C 0.70 V 4.7 mΩ d = 0.5 for power loss calculation only 0.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 107 pF I RM max. reverse recovery current TVJ = 25 °C 27 A I F = 100 A; VR = 300 V TVJ = 100 °C 40 A t rr reverse recovery time -di F /dt = 600 A/µs TVJ = 25 °C 80 ns TVJ = 100 °C 150 ns IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 0.10 TC = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 250 W 1.20 kA 20130703b DSEI2x101-06A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number DSEI2x101-06A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x101-06A * on die level Delivery Mode Tube Code No. 468029 T VJ = 150 °C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 3.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Fast Diode 150 80 7 TVJ = 100°C VR = 300 V 6 125 60 5 100 IF Qr 75 [A] [µC] 3 100°C 2 50 IRM 50 IF = 200 A 100 A 50 A 4 TVJ = 150°C IF = 200 A 100 A 50 A 70 [A] 40 30 TVJ = 100°C VR = 300 V 20 25°C 25 1 0 0.0 0.5 1.0 10 0 0 100 1.5 0 1000 VF [V] Fig. 1 Forward current IF versus VF 240 trr 200 VFR Kf [ns] 180 160 Qrr 140 0.4 50 100 150 TVJ = 100°C VR = 300 V IF = 200 A 100 A 50 A 40 2.0 30 1.5 20 1.0 10 0.5 tfr [µs] 200 400 600 800 1000 0 200 -diF /dt [A/µs] TVJ [°C] tfr VFR 0 0 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dyn. parameters Qr, IRM versus TVJ 2.5 [V] 120 0 1000 3.0 50 220 IRM 800 60 TVJ = 100°C VR = 300 V 1.2 0.8 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 260 1.0 400 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 0.6 200 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 Constants for ZthJC calculation: D=0.7 ZthJC 0.5 i [K/W] 0.3 0.2 1 2 3 4 5 0.1 0.1 0.05 Single Pulse 0.05 0.001 0.01 0.1 1 Rthi ti [K/W] [s] 0.020 0.050 0.076 0.240 0.114 0.00002 0.00081 0.01000 0.09400 0.45000 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b