DSEI2x101-06A
FRED
VRRM
=
600 V
I FAV
= 2x
96 A
t rr
=
35 ns
Fast Recovery Epitaxial Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEI2x101-06A
Backside: isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Terms and Conditions of Usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130703b
DSEI2x101-06A
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
TVJ = 25°C
3
mA
TVJ = 125°C
20
mA
I F = 100 A
TVJ = 25°C
1.25
V
1.40
V
1.17
V
TVJ = 150 °C
I F = 200 A
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
V
VR = 600 V
I F = 100 A
average forward current
600
VR = 480 V
I F = 200 A
I FAV
max. Unit
600
V
TC = 70 °C
rectangular
1.70
V
T VJ = 150 °C
96
A
TVJ = 150 °C
0.70
V
4.7
mΩ
d = 0.5
for power loss calculation only
0.5 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
107
pF
I RM
max. reverse recovery current
TVJ = 25 °C
27
A
I F = 100 A; VR = 300 V
TVJ = 100 °C
40
A
t rr
reverse recovery time
-di F /dt = 600 A/µs
TVJ = 25 °C
80
ns
TVJ = 100 °C
150
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
0.10
TC = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
250
W
1.20
kA
20130703b
DSEI2x101-06A
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
150
Unit
A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
terminal to terminal
10.5
terminal to backside
8.6
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3.2
mm
6.8
mm
3000
V
2500
V
Product Marking
Part No.
Logo
XXXXX ®
Zyyww
abcd
Assembly Line
DateCode
Ordering
Standard
Assembly Code
Ordering Number
DSEI2x101-06A
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSEI2x101-06A
* on die level
Delivery Mode
Tube
Code No.
468029
T VJ = 150 °C
Fast
Diode
V 0 max
threshold voltage
0.7
V
R0 max
slope resistance *
3.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20130703b
DSEI2x101-06A
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130703b
DSEI2x101-06A
Fast Diode
150
80
7
TVJ = 100°C
VR = 300 V
6
125
60
5
100
IF
Qr
75
[A]
[µC] 3
100°C
2
50
IRM 50
IF = 200 A
100 A
50 A
4
TVJ = 150°C
IF = 200 A
100 A
50 A
70
[A]
40
30
TVJ = 100°C
VR = 300 V
20
25°C
25
1
0
0.0
0.5
1.0
10
0
0
100
1.5
0
1000
VF [V]
Fig. 1 Forward current
IF versus VF
240
trr 200
VFR
Kf
[ns] 180
160
Qrr
140
0.4
50
100
150
TVJ = 100°C
VR = 300 V
IF = 200 A
100 A
50 A
40
2.0
30
1.5
20
1.0
10
0.5
tfr
[µs]
200
400
600
800
1000
0
200
-diF /dt [A/µs]
TVJ [°C]
tfr
VFR
0
0
400
600
800
0.0
1000
-diF /dt [A/µs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 4 Typ. dyn. parameters
Qr, IRM versus TVJ
2.5
[V]
120
0
1000
3.0
50
220
IRM
800
60
TVJ = 100°C
VR = 300 V
1.2
0.8
600
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
260
1.0
400
-diF /dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
1.4
0.6
200
-diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
1
Constants for ZthJC calculation:
D=0.7
ZthJC
0.5
i
[K/W]
0.3
0.2
1
2
3
4
5
0.1
0.1
0.05
Single Pulse
0.05
0.001
0.01
0.1
1
Rthi
ti
[K/W]
[s]
0.020
0.050
0.076
0.240
0.114
0.00002
0.00081
0.01000
0.09400
0.45000
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130703b
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