DSEI2X101-12A

DSEI2x101-12A FRED VRRM = 1200 V I FAV = 2x 99 A t rr = 40 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. TVJ = 25°C 3 mA TVJ = 125°C 15 mA I F = 100 A TVJ = 25°C 1.87 V 2.13 V 1.61 V TVJ = 150 °C I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 1200 V I F = 100 A average forward current 1200 VR = 960 V I F = 200 A I FAV max. Unit 1200 V TC = 50 °C rectangular 1.92 V T VJ = 150 °C 99 A TVJ = 150 °C 1.01 V 6.1 mΩ d = 0.5 for power loss calculation only 0.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 107 pF TVJ = 25 °C 38 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 0.10 TC = 25°C 250 900 W A I F = 100 A; VR = 600 V TVJ = 100 °C 52 A -di F /dt = 600 A/µs TVJ = 25 °C 150 ns TVJ = 100 °C 255 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number DSEI2x101-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x101-12A * on die level Delivery Mode Tube Code No. 468002 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1.01 V R0 max slope resistance * 4.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a DSEI2x101-12A Fast Diode 150 16 140 TVJ = 100°C VR = 600 V 14 125 120 12 100 IF [A] IF = 200 A 100 A 50 A 10 Qr 75 TVJ = 150°C 8 IRM 80 [A] 60 [µC] 6 50 40 4 100°C 25 IF = 200 A 100 A 50 A 100 TVJ = 100°C VR = 600 V 20 2 25°C 0 0.0 0.5 1.0 1.5 0 100 2.0 0 1000 VF [V] Fig. 1 Forward current IF versus VF 1.4 trr 0.8 [ns] IRM 0.6 Qrr 600 800 60 TVJ = 100°C VR = 600 V 1.5 TVJ = 100°C VR = 600 V 50 40 IF = 200 A 100 A 50 A 350 1.0 VFR tfr 30 [µs] [V] 300 20 250 10 200 0 0.5 VFR 0.4 0 40 80 120 160 0 TVJ [°C] 200 400 600 800 1000 0 tfr 200 -diF /dt [A/µs] 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dyn. parameters Qr, IRM versus TVJ 1000 Fig. 3 Typ. peak reverse current Irr versus -diF /dt 400 Kf 400 Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 450 1.0 200 -diF /dt [A/µs] 500 1.2 0 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 D=0.7 ZthJC Constants for ZthJC calculation: 0.5 i 0.3 [K/W] 0.1 0.1 0.05 Single Pulse 0.05 0.001 Rthi ti [K/W] 0.2 0.01 0.1 1 10 1 2 3 4 5 0.020 0.050 0.076 0.240 0.114 [s] 0.00002 0.00081 0.01000 0.09400 0.45000 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a