DSEI2X121-02A

DSEI2x121-02A Fast Recovery Epitaxial Diode (FRED) IFAVM = 2x 123 A VRRM = 200 V trr = 35 ns Part number DSEI2x121-02A E72873 Features / Advantages: Applications: • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) Package: miniBLOC, SOT-227 B Isolation voltage 2500 V~ International standard package (ISOTOP compatible) 2 independent FREDs in 1 package • RoHS compliant • Epoxy meets UL 94V-0 ● ● ● Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified. 20220615b 1-3 DSEI2x121-02A Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM IFSM TVJ = 45°C; I2t Maximum Ratings 150 123 600 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s 250 W Ptot TC = 25°C Symbol Conditions IR VR = VRRM TVJ = 25°C VR = 0.8·VRRM TVJ = 25°C VR = 0.8·VRRM TVJ = 125°C VF IF = 120 A TVJ = 150°C TVJ = 25°C VT rT For power-loss calculations only TVJ = TVJM Characteristic Values typ. max. 0.89 RthJC RthCK 1 0.5 20 mA mA mA 0.95 1.10 V V 0.7 2.1 V mW 0.5 K/W K/W 0.1 trr IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 100 V; IF = 100 A; -diF/dt = 200 A/µs L < 0.05 µH; TVJ = 100°C 12 15 A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747 Data according to IEC 60747and per semiconductor unless otherwise specified. 20220615b 2-3 DSEI2x121-02A Package miniBLOC, SOT-227 B Ratings Symbol Definitions Conditions IRMS RMS current per terminal ① TVJ Top Tstg virtual junction temperature operation temperature storage temperature min. typ. -40 -40 -40 Weight max. 150 A 150 125 150 °C °C °C 30 MD MT mounting torque terminal torque (M4) dSpp/App dSpb/Apb creepage distance on surface | striking distance through air VISOL isolation voltage 1.1 1.1 t = 1 second t = 1 minute terminal to terminal 10.5 terminal to backside 8.6 50/60 Hz, RMS; IISOL < 1 mA g 1.5 1.5 Nm Nm 3.2 6.8 mm mm 3000 2500 V V ① IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. J Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 K Z H A G B 1 C M W N V T S 2 * D E L 3 4 F* Q R * Center of each nut pocket O P A B C D E F G H J K L M N O P Q R Millimeter min max 31.50 31.88 7.80 8.20 4.09 4.29 4.09 4.29 4.09 4.29 14.91 15.11 30.12 30.30 37.80 38.23 11.68 12.22 8.92 9.60 0.74 0.84 12.50 13.10 25.15 25.42 1.95 2.13 6.20 4.95 26.90 26.54 4.42 3.94 S T U V W Z 4.55 24.59 -0.05 3.20 19.81 2.50 Dim. U 4.85 25.25 0.10 5.50 21.08 2.70 Inches min max 1.240 1.255 0.307 0.323 0.161 0.169 0.161 0.169 0.161 0.169 0.587 0.595 1.186 1.193 1.488 1.505 0.460 0.481 0.351 0.378 0.029 0.033 0.492 0.516 0.990 1.001 0.077 0.084 0.195 0.244 1.045 1.059 0.155 0.167 0.179 0.191 0.968 0.994 -0.002 0.004 0.126 0.217 0.780 0.830 0.098 0.106 Product Marking Logo Date� Code IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved yywwZ ® XXXXX 123456 Location UL Part Number Lot# Data according to IEC 60747and per semiconductor unless otherwise specified. 20220615b 3-3 DSEI2x121-02A 2.0 200 175 TVJ = 100°C VR = 100 V 50 150 1.5 TVJ = 150°C IF 125 TVJ = 100°C Qr 100 [A] 60 TVJ = 100°C VR = 100 V IRM 40 IF = 240 A IF = 120 A IF = 60 A 1.0 [A] 30 [μC] 75 IF = 240 A IF = 120 A IF = 60 A 20 0.5 50 TVJ = 25°C 10 25 0 0.0 0.5 1.0 0.0 10 1.5 100 0 125 12 TVJ = 100°C VR = 100 V IF = 240 A IF = 120 A IF = 60 A trr 100 0 2.0 6 1.5fr 4 1.0 50 150 0 200 400 600 800 1000 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Typ. dyn. parameters Qr, IRM versus TVJ t [μs] [V] 2 100 2.5 8 75 50 3.0 VFR [ns] 0.0 1000 TVJ = 100°C IF = 120 V 10 Qr 800 Fig. 3 Typ. peak reverse current Irr versus -diF /dt 1.5 IRM 600 Fig. 2 Typ. reverse recov, charge Qrr versus -diF /dt 150 0.5 400 -diF /dt [A/µs] 2.0 Kf 1.0 200 -diF /dt [A/μs] VF [V] Fig. 1 Forward current IF versus VF 0 1000 VFR trr 0 0.5 0.0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 D = 0.5 0.1 0.2 ZthJC 0.1 [K/W] 0.05 Constants for ZthJC calculation: 0.02 0.01 i 0.01 Single Pulse 0.001 0.001 0.01 0.1 1 Rthi (K/W) ti (s) 1 0.0725 0.0028 2 0.1423 0.0092 3 0.2852 0.0350 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified. 20220615b 4-3