DSEI2X121-02P

DSEI 2x121 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 200 200 Type AC-1 IK-10 LN-9 VX-18 IFAVM = 2x123 A VRRM = 200 V = 35 ns trr DSEI 2x 121-02P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine Maximum Ratings (per diode) TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Conditions IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM A -40...+150 150 -40...+150 °C °C °C 250 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 20 g t Characteristic Values (per diode) typ. max. TVJ = 150°C TVJ = 25°C 0.89 No RthJC RthCK fo Symbol VT0 rT 1200 r Weight IF = 120 A; A A A ne Ptot 150 123 600 w TVJ TVJM Tstg VF de si gn D5 For power-loss calculations only TVJ = TVJM 1 0.5 20 mA mA mA 0.95 1.10 V V 0.7 2.1 V mΩ 0.7 K/W K/W 0.1 trr IF = 1 A; -di/dt = 400 A/µs VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 100 V; IF = 100 A; -diF/dt = 200 A/µs L ≤ 0.05 µH; TVJ = 100°C 12 15 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight Recommended replacement: DSEI 2x161-02P/DSEI 2x121-02A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 20070731a 1-2 DSEI 2x 121-02P IF 200 A 175 2.0 150 Qr 1.5 60 A TVJ= 100°C VR = 100V μC TVJ= 100°C VR = 100V 50 IRM IF=240A IF=120A IF= 60A 40 125 IF=240A IF=120A IF= 60A 1.0 100 TVJ=150°C 75 30 20 TVJ=100°C 0.5 50 TVJ=25°C 10 25 0.5 1.0 V VF 0.0 10 1.5 Fig. 1 Forward current IF versus VF 0 100 A/μs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 2.0 0 200 150 Kf VFR trr 125 IF=240A IF=120A IF= 60A 100 0.5 75 50 50 100 TVJ °C 150 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 tfr 2.0 6 1.5 4 1.0 2 0.5 0 200 600 800 A/μs -diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 0 0.0 100 200 300 400 500 A/μs diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt t 1 K/W 0 fo 0 r 0.0 VFR tfr ne 1.0 μs 2.5 8 w IRM 3.0 TVJ= 100°C IF = 120A V 10 Qr D5 600 A/μs 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 12 TVJ= 100°C VR = 100V ns 1.5 400 de si gn 0 0.0 No Dimensions in mm (1mm = 0.0394“) D=0.5 0.1 ZthJC 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles 20070731a © 2007 IXYS All rights reserved 2-2