DSEI2X30-10P

DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine Maximum Ratings (per diode) TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Conditions IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM A -40...+150 150 -40...+150 °C °C °C 100 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 18 g Characteristic Values (per diode) typ. max. t fo Symbol IF = 30 A; TVJ = 150°C TVJ = 25°C No RthJC RthCK 200 r Weight VT0 rT A A A ne Ptot 70 30 375 w TVJ TVJM Tstg VF de si gn D5 For power-loss calculations only TVJ = TVJM 750 250 7 µA µA mA 2.0 2.4 V V 1.5 12.5 V mΩ 1.25 K/W K/W 0.05 trr IF = 1 A; -di/dt = 100 A/µs VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C 16 18 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight Recommended replacement: DSEI 2x31-10P, DSEI 2x31-10B ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 20070731a 1-2 DSEI 2x30-10P de si gn D5 Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. fo r ne w Fig. 1 Forward current versus voltage drop. Fig. 5 Recovery time versus -diF/dt. No t Fig. 4 Dynamic parameters versus junction temperature. Fig. 6 Peak forward voltage versus diF/dt. Dimensions in mm (1mm = 0.0394“) Fig. 7 Transient thermal impedance junction to case. 20070731a © 2007 IXYS All rights reserved 2-2