DSEI2X30-12P

DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine Maximum Ratings (per diode) TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Conditions IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM A -40...+150 150 -40...+150 °C °C °C 100 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 18 g Characteristic Values (per diode) typ. max. t fo Symbol IF = 30 A; TVJ = 150°C TVJ = 25°C No RthJC RthCK 200 r Weight VT0 rT A A A ne Ptot 70 28 375 w TVJ TVJM Tstg VF de si gn D5 For power-loss calculations only TVJ = TVJM 750 250 7 µA µA mA 2.20 2.55 V V 1.65 18.2 V mΩ 1.25 K/W K/W 0.05 trr IF = 1 A; -di/dt = 100 A/µs VR = 30 V; TVJ = 25°C 40 50 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C 16 18 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight Recommended replacement: DSEI 2x31-12P, DSEI 2x31-12B ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved 20070731a 1-2 DSEI 2x30-12P 70 A 60 6 TVJ=100°C µC V = 540V R 5 50 IF=30A IF=60A IF=30A IF=15A 4 IF Qr TVJ=25°C TVJ=100°C TVJ=150°C 40 30 3 50 A TVJ=100°C VR= 540V 40 max. IF=30A IF=60A IF=30A IF=15A IRM 30 20 2 20 1 10 0 10 typ. 0 0 1 2 3 V 4 1 10 VF 100 A/µs 1000 Fig. 1 Forward current versus voltage drop. 0.8 0.8 0.6 IF=30A IF=60A IF=30A IF=15A max. 0.6 0.4 QR ne 0.4 0.2 0.0 0.0 40 80 120 °C 160 TJ 200 400 1000 40 800 30 600 20 400 VFR tfr tfr TVJ=125°C IF=30A 200 0 0 A/µs 600 -diF/dt Fig. 5 Recovery time versus -diF/dt. 0 400 A/µs 600 200 diF/dt Fig. 6 Peak forward voltage versus diF/dt. Dimensions in mm (1mm = 0.0394“) No t fo Fig. 4 Dynamic parameters versus junction temperature. 0 r 0 ns 50 10 typ. 0.2 1200 V VFR w trr D5 Fig. 3 Peak reverse current versus -diF/dt. TVJ=100°C VR=540V µs IRM 400 A/µs 600 60 1.0 1.2 200 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 1.0 0 -diF/dt de si gn 0 Kf typ. max. Fig. 7 Transient thermal impedance junction to case. 20070731a © 2007 IXYS All rights reserved 2-2