DSEI2x61-02A
FRED
VRRM
=
200 V
I FAV
= 2x
60 A
t rr
=
20 ns
Fast Recovery Epitaxial Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEI2x61-02A
Backside: isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
DSEI2x61-02A
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
200
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
VR = 200 V
TVJ = 25°C
50
µA
TVJ = 125°C
11
mA
IF =
TVJ = 25°C
1.07
V
1.25
V
0.91
V
IF =
60 A
TVJ = 150 °C
60 A
I F = 120 A
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
V
VR = 160 V
I F = 120 A
I FAV
max. Unit
200
V
TC = 100 °C
rectangular
1.15
V
T VJ = 150 °C
60
A
TVJ = 150 °C
0.69
V
3.7
mΩ
d = 0.5
for power loss calculation only
0.7 K/W
0.10
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 200 V f = 1 MHz
TVJ = 25°C
170
pF
TVJ = 25 °C
6.5
A
TVJ = 100 °C
11
A
TVJ = 25 °C
20
ns
TVJ = 100 °C
50
ns
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
70 A; VR = 100 V
-di F /dt = 400 A/µs
180
950
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
20201009b
DSEI2x61-02A
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
150
Unit
A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
terminal to terminal
10.5
terminal to backside
8.6
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3.2
mm
6.8
mm
3000
V
2500
V
Product Marking
Logo
XXXXX ®
yywwZ
123456
Date
Code
Location
Ordering
Standard
Part
Number
UL
Lot#
Ordering Number
DSEI2x61-02A
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSEI2x61-02A
* on die level
Delivery Mode
Tube
Code No.
469769
T VJ = 150°C
Fast
Diode
V 0 max
threshold voltage
0.69
V
R0 max
slope resistance *
1.8
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
DSEI2x61-02A
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
DSEI2x61-02A
Fast Diode
120
0.8
30
100
0.6
80
IF
[A]
TVJ = 150°C
100°C
Qr
60
20
IRM
TVJ = 100°C
VR = 100 V
0.4
IF = 140 A
70 A
35 A
25
IF = 140 A
70 A
35 A
15
[µC]
[A]
10
40
0.2
TVJ = 100°C
VR = 100 V
5
20
25°C
0
0.0
0.4
0.8
0
0.0
10
1.2
100
1000
0
200
-diF /dt [A/µs]
VF [V]
Fig. 1 Forward current IF versus
max. forward voltage drop VF
600
800
1000
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
1.6
400
-diF /dt [A/µs]
70
5
2.5
TVJ = 100°C
VR = 100 V
TVJ = 100°C
VR = 100 V
1.4
4
2.0
VFR 3
1.5
[V] 2
1.0
60
1.2
trr
1.0
Kf
50
0.8
tfr
[ns]
IRM
0.6
0.4
VFR
IF = 140 A
70 A
35 A
40
tfr
1
[µs]
0.5
Qrr
0.2
30
0
40
80
120
160
0
0
200
400
600
800
1000
0
200
-diF /dt [A/µs]
TVJ [°C]
600
0.0
800
-diF /dt [A/µs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
400
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
0.8
Constants for ZthJC calculation:
0.6
ZthJC
0.4
i
Rthi (K/W)
ti (s)
1
0.120
0.010
2
0.045
0.002
[K/W]
3
0.105
0.050
0.2
4
0.160
0.050
5
0.270
0.350
0.0
1
10
100
1000
10000
t [ms]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
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