DSEI2X61-02P

DSEI 2x61 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 200 200 IFAVM = 2x71 A VRRM = 200 V trr = 35 ns Type DSEI 2x 61-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 100 71 800 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 950 A -40...+150 150 -40...+150 °C °C °C 150 W 2500 3000 V~ V~ 1.5 - 2.0 14 - 18 Nm lb.in. 18 g TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Weight Symbol Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 • VRRM TVJ = 125°C VR = 0.8 • VRRM VF IF = 60 A; TVJ = 150°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK 50 40 11 µA µA mA 0.88 1.08 V V 0.7 3.0 V mΩ 0.8 K/W K/W 0.05 t rr IF = 1 A; -di/dt = 200 A/µs VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 100 V; IF = 60 A; -diF/dt = 200 A/µs TVJ = 100°C 8 10 A dS dA a Creeping distance on surface Creeping distance in air Allowable acceleration min. 11.2 min. 11.2 max. 50 mm mm m/s² Features • • • • • • 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2008 IXYS All rights reserved 20080125a 1-2 DSEI 2x 61-12P 0.8 160 A 140 30 TVJ= 100°C VR = 100V μC TVJ= 100°C A V = 100V R 25 Qr IF IRM 0.6 120 IF= 35A IF= 70A IF=140A 100 80 0.4 20 IF= 35A IF= 70A IF=140A 15 TVJ=150°C 60 10 TVJ=100°C 40 0.2 5 20 TVJ=25°C 0 0.0 0.4 0.8 0 0.0 10 1.2 V 100 VF Fig. 1 Forward current IF versus VF A/μs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 1.6 70 ns 1.4 trr 1.2 1.0 50 0.6 TVJ= 100°C IF = 100A 4 2.5 μs 2.0 tfr tfr IF=35A IF=70A IF=140A D5 600 A/μs 800 1000 -diF/dt V VFR 30 IRM 400 5 40 0.8 200 Fig. 3 Typ. peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 100V 60 Kf 0 VFR 3 1.5 2 1.0 1 0.5 20 Qr 0.4 10 0.2 0 0 40 80 120 °C 160 0 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/μs 800 -diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 1000 0 200 400 600 diF/dt 0.0 800 A/μs Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Dimensions 1 K/W ZthJC 0.1 Constants for ZthJC calculation: Rthi / (K/W) ti / (s) 0.1000 0.3400 0.3600 0.01 0.0001 0.00014 0.00600 0.16500 DSEI 2x61-02 0.001 0.01 0.1 1 s 10 t Fig. 7 Transient thermal impedance junction to case 20080125a © 2008 IXYS All rights reserved 2-2