DSEI2X61-12B

DSEI2x61-12B FRED VRRM = 1200 V I FAV = 2x 60 A t rr = 50 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x61-12B Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721c DSEI2x61-12B Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 1200 V TVJ = 25°C 2.2 mA VR = 960 V TVJ = 125°C 14 mA IF = TVJ = 25°C 2.44 V 2.82 V 2.09 V 60 A I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case max. Unit 1200 V TC = 45 °C rectangular 2.63 V T VJ = 150 °C 60 A TVJ = 150 °C 1.58 V 8.5 mΩ d = 0.5 for power loss calculation only 0.7 K/W 0.10 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 31 pF TVJ = 25 °C 13 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 60 A; VR = 540 V -di F /dt = 300 A/µs 180 450 W A TVJ = 100 °C 20 A TVJ = 25 °C 190 ns TVJ = 100 °C 380 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20210721c DSEI2x61-12B Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 123456 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number DSEI2x61-12B Similar Part DSEI2x61-10B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x61-12B Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 460532 Voltage class 1000 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.58 V R0 max slope resistance * 6.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20210721c DSEI2x61-12B Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721c DSEI2x61-12B Fast Diode 120 12 100 TVJ = 100°C VR = 540 V 10 TVJ = 25°C 100°C 150°C 80 IF 80 TVJ = 100°C VR = 540 V Qr 60 [A] 60 IF = 60 A 120 A 8 IRM 60 A 30 A 6 max. 60 A 30 A 40 [A] [µC] 40 IF = 60 A 120 A max. 4 20 20 2 0 0 1 2 0 10 3 0 100 1000 0 200 400 600 800 1000 VF [V] -diF /dt [A/µs] -diF /dt [A/µs] Fig. 1 Forward current IF versus max. forward voltage drop VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 1.4 1.0 1.2 60 TVJ = 100°C VR = 540 V 0.8 1.0 max. trr KF 0.8 IF = 60 A 120 A 0.6 1200 TVJ = 125°C IF = 60 A 50 1000 40 800 30 600 VFR 60 A 30 A [V] tfr [ns] [µs] 0.4 IRM 20 0.6 QR 0.4 0.2 0.2 10 40 80 120 160 200 VFR 0 0.0 0 400 tfr 0 200 TJ [°C] 400 600 800 0 0 1000 200 600 800 1000 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 0.8 0.6 Constants for ZthJC calculation: ZthJC i Rthi (K/W) ti (s) 0.4 1 0.120 0.010 [K/W] 2 0.045 0.002 0.2 3 0.105 0.050 4 0.160 0.050 5 0.270 0.350 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210721c