DSEI30-06A

DSEI30-06A FRED VRRM = 600 V I FAV = 30 A t rr = 35 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI30-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI30-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 100 µA VR = 480 V TVJ = 125°C 7 mA IF = 30 A TVJ = 25°C 1.52 V IF = 60 A 1.71 V IF = 30 A 1.36 V IF = 60 A TVJ = 150 °C TC = 110 °C rectangular 1.64 V T VJ = 150 °C 30 A TVJ = 150 °C 1.10 V 8.5 mΩ d = 0.5 for power loss calculation only 0.8 K/W 0.25 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 22 pF TVJ = 25 °C 5.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 37 A; VR = 350 V -di F /dt = 200 A/µs 155 300 W A TVJ = 100 °C 9 A TVJ = 25 °C 80 ns TVJ = 100 °C 150 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI30-06A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSEI30-06A Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 30 Code No. 434272 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.1 R0 max slope resistance * 6 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DSEI30-06A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI30-06A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI30-06A Fast Diode 60 3.0 50 2.5 40 2.0 40 TVJ = 100°C VR = 350 V TVJ = 100°C VR = 350 V 30 IF Qr TVJ = 150°C 100°C 25°C 30 [A] IF = 37 A 74 A 37 A 18.5 A 1.5 [µC] 20 1.0 10 0.5 IF = 37 A max. 74 A 37 A 18.5 A IRM 20 max. [A] 10 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 VF [V] 10 100 1000 0 200 -diF /dt [A/µs] 1.4 0.6 20 16 0.4 max. 1.0 trr Kf 0.3 800 tfr IF = 37 A 74 A 37 A 18.5 A VFR 12 600 [V] 400 [ns] [µs] 0.8 1000 TVJ = 125°C IF = 37 A TVJ = 100°C VR = 350 V 0.5 1.2 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 1 Forward current IF versus max. forward voltage drop VF 400 -diF /dt [A/µs] 8 0.2 IRM 0.6 4 0.1 VFR tfr 200 Qr 0.4 0.0 0 40 80 120 160 0 0 200 400 600 0 0 200 -diF /dt [A/µs] TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 600 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1.0 0.8 Constants for ZthJC calculation: i Rthi (K/W) 1 0.200 0.0018 0.4 2 0.220 0.0100 [K/W] 3 0.080 0.5000 0.2 4 0.300 0.0900 0.6 ZthJC ti (s) 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b