DSEI30-10A

Fast Recovery Epitaxial Diode (FRED) DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 70 30 375 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 185 195 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 180 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 170 160 A2s A2s -40...+150 150 -40...+150 °C °C °C 138 W TVJ TVJM Tstg ● ● ● ● ● ● ● TC = 25°C Md * FC Mounting torque mounting force with clip VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 0.8...1.2 20...120 2500 Weight 6 Nm N V~ g ● ● ● ● ● ● * Verson A only; ** Version AR only ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 750 250 7 mA mA mA IF = 36 A; TVJ = 150°C TVJ = 25°C 2 2.4 V V 1.5 12.5 V mW 0.9 35 K/W K/W K/W VF Characteristic Values typ. max. For power-loss calculations only TVJ = TVJM RthJC RthCK RthJA 0.25 trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C 16 18 A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Version AR isolated and UL registered E153432 Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● ● ● VT0 rT International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 Applications ● Ptot * Patent pending Features ● I2t Isolated back surface * ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 026 V VRRM IFAVM = 30 A VRRM = 1000 V trr = 35 ns 1-2 DSEI 30, 1000 V Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 2-2