DSEI30-10AR

DSEI30-10AR FRED VRRM = 1000 V I FAV = 30 A t rr = 45 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI30-10AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a DSEI30-10AR Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1000 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1000 V V VR = 1000 V TVJ = 25°C 750 µA VR = 800 V TVJ = 125°C 7 mA IF = 30 A TVJ = 25°C 2.36 V IF = 60 A 2.67 V IF = 30 A 2.00 V IF = 60 A TVJ = 150 °C TC = 70 °C rectangular 2.50 V T VJ = 150 °C 30 A TVJ = 150 °C 1.53 V 15.5 mΩ d = 0.5 for power loss calculation only 1.1 K/W 0.25 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 16 pF TVJ = 25 °C 9 A TVJ = 100 °C 13 A TVJ = 25 °C 90 ns TVJ = 100 °C 150 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 540 V -di F /dt = 200 A/µs 115 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20201013a DSEI30-10AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.4 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSEI30-10AR Similar Part DSEI30-10A DSEI30-12A Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Quantity 30 Code No. 481947 Voltage class 1000 1200 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.53 R0 max slope resistance * 13 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DSEI30-10AR V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a DSEI30-10AR Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b2 c 2x b Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 © 2020 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a DSEI30-10AR Fast Diode 60 4 50 TVJ = 100°C VR = 540 V 50 TVJ = 100°C VR = 540 V 40 3 IF = 30 60 30 15 40 IF IF = 30 A 60 A 30 A 15 A Qr 30 2 TVJ = 150°C 100°C 25°C [A] 20 [µC] IRM 30 max. A A A A max. [A] 20 1 10 10 0 0 0 0 1 2 3 1 VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF 1.4 10 100 1000 0 100 200 300 400 500 600 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 0.8 50 1000 40 800 TVJ = 100°C VR = 540 V 1.2 0.6 1.0 trr Kf max. 0.4 [µs] 0.8 0.6 IRM IF = 30 A 60 A 30 A 15 A VFR 30 [V] 20 tfr 400 tfr 0.2 10 Qr [ns] 200 VFR 0.4 0.0 0 600 TVJ = 125°C IF = 30 A 40 80 120 160 0 0 TVJ [°C] 100 200 300 400 500 600 100 200 300 400 500 600 diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 0 Fig. 5 Typ. recovery time trr versus -diF /dt 1.2 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [k/W] 0.4 0.2 i Rthi (K/W) ti (s) 1 0.030 0.0100 2 0.100 0.0120 3 0.360 0.0300 4 0.610 0.2700 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a