DSEI36-06AS-TUB

DSEI36-06AS FRED VRRM = 600 V I FAV = 30 A t rr = 35 ns Fast Recovery Epitaxial Diode Single Diode Part number DSEI36-06AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201012b DSEI36-06AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 100 µA VR = 480 V TVJ = 125°C 7 mA IF = 30 A TVJ = 25°C 1.54 V IF = 60 A 1.74 V IF = 30 A 1.38 V IF = 60 A TVJ = 150 °C TC = 110 °C rectangular 1.67 V T VJ = 150 °C 30 A TVJ = 150 °C 1.10 V 9.1 mΩ d = 0.5 for power loss calculation only 0.8 K/W 0.25 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 22 pF TVJ = 25 °C 5.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 37 A; VR = 350 V -di F /dt = 200 A/µs 155 300 W A TVJ = 100 °C 9 A TVJ = 25 °C 80 ns TVJ = 100 °C 150 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20201012b DSEI36-06AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSEI36-06AS-TRL DSEI36-06AS-TUB Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 500059 469114 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.1 R0 max slope resistance * 6 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DSEI36-06AS-TRL DSEI36-06AS V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20201012b DSEI36-06AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20201012b DSEI36-06AS Fast Diode 60 3.0 50 2.5 40 2.0 40 TVJ = 100°C VR = 350 V TVJ = 100°C VR = 350 V max. 30 IF TVJ = 150°C 100°C 25°C 30 [A] max. Qr 1.5 [µC] 20 IF = 37 A 74 A 37 A 18.5 A IRM IF = 37 A 74 A 37 A 18.5 A 20 [A] 1.0 typ. 10 10 0.5 typ. 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 VF [V] 10 100 1000 Fig. 1 Forward current versus max. forward voltage drop 1.4 0.6 TVJ = 100°C VR = 350 V max. 0.4 trr Kf [µs] 0.8 400 600 20 1000 TVJ = 125°C IF = 37 A 16 800 VFR 12 600 [V] 8 400 tfr IF = 37 A 74 A 37 A 18.5 A 0.3 200 -diF /dt [A/µs] Fig. 3 Peak reverse current versus -diF /dt 0.5 1.2 1.0 0 -diF /dt [A/µs] Fig. 2 Recovery charge versus -diF /dt [ns] 0.2 IRM 0.6 0.0 0 40 80 120 160 tfr typ. Qr 0.4 VFR 4 0.1 0 0 200 400 600 0 0 -diF /dt [A/µs] TJ [°C] Fig. 5 Recovery time versus -diF /dt Fig. 4 Dynamic parameters vs. junction temperature 200 200 400 -diF /dt [A/µs] 600 Fig. 6 Peak forward voltage versus -diF /dt 1.0 0.8 Constants for ZthJC calculation: 0.6 ZthJC 0.4 [K/W] i Rthi (K/W) 1 0.200 0.0018 2 0.220 0.0100 3 0.080 0.5000 4 0.300 0.0900 ti (s) 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201012b