DSEI60-02A

Fast Recovery Epitaxial Diode (FRED) DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 98 69 800 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 650 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 540 580 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1770 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1460 1410 A2s A2s -40...+150 150 -40...+150 °C °C °C 150 W Features ● ● ● ● ● I2t TVJ = 45°C TVJ TVJM Tstg ● ● Applications ● ● ● ● Ptot TC = 25°C Md Mounting torque 0.8...1.2 Weight 6 Nm g ● ● ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C Characteristic Values typ. max. VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 50 40 11 mA mA mA ● VT0 rT IF = 60 A; TVJ = 150°C TVJ = 25°C 0.88 1.08 V V 0.70 4.0 V mW 0.75 35 K/W K/W K/W 35 50 ns 8 10 A For power-loss calculations only TVJ = TVJM RthJC RthCK RthJA 0.25 trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 60 A; -diF/dt = 200 A/ms L £ 0.05 mH; TVJ = 100°C ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● VF International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ● ● ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 036 Symbol 1-2 DSEI 60, 200V 0.8 160 A 140 Qr IF 30 TVJ= 100°C VR = 100V µC 25 IRM 0.6 120 IF= 35A IF= 70A IF=140A 100 80 TVJ= 100°C VR = 100V A 20 0.4 IF= 35A IF= 70A IF=140A 15 TVJ=150°C 60 10 TVJ=100°C 40 0.2 5 20 TVJ=25°C 0 0.0 0.4 0.8 0.0 10 1.2 V 100 VF Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 1.6 70 ns 1.4 trr 1.2 1.0 50 0.6 ms 1000 600 A/ 800 -diF/dt 400 5 TVJ= 100°C IF = 100A V 4 IF=35A IF=70A IF=140A 2.5 µs 2.0 tfr tfr 30 IRM 200 Fig. 3 Typ. peak reverse current IRM versus -diF/dt VFR 40 0.8 0 TVJ= 100°C VR = 100V 60 Kf 0 A/ms 1000 -diF/dt VFR 3 1.5 2 1.0 1 0.5 20 Qr 0.4 10 0.2 0 0 40 80 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 ms -diF/dt 0 1000 Fig. 5 Typ. recovery time trr versus -diF/dt 1.0 Dimensions 0 200 ZthJC 0.6 0.4 0.2 0.0 0.001 DSEI 60-02 0.01 0.1 s 1 600 diF/dt 0.0 A/800 ms Fig. 6 Typ peak forward voltage VFR and tfr versus diF/dt Dim. K/W 0.8 400 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 10 t 839 Fig. 7 Transient thermal impedance junction to case © 2000 IXYS All rights reserved 2-2