DSEI60-12A

Fast Recovery Epitaxial Diode (FRED) DSEI 60 VRSM A V 1200 VRRM Type C IFAVM = 52 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 C DSEI 60-12A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 100 52 800 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 480 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1200 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 950 A2s A2s -40...+150 150 -40...+150 °C °C °C 189 W Features ● ● ● ● ● I2t TVJ = 45°C TVJ TVJM Tstg ● ● Applications ● ● ● ● Ptot TC = 25°C Md Mounting torque 0.8...1.2 Weight 6 Nm ● g ● ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C Characteristic Values typ. max. VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 2.2 0.5 14 mA mA mA ● IF = 60 A; TVJ = 150°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK RthJA 2.0 2.55 V V 1.65 8.3 V mW 0.66 35 K/W K/W K/W 0.25 trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 40 60 ns IRM VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms L £ 0.05 mH; TVJ = 100°C 32 36 A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● VF International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ● ● ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 036 Symbol 1-2 DSEI 60, 1200 V 90 12 A 80 µC TVJ= 25°C TVJ=100°C TVJ=150°C 70 IF 60 80 TVJ=100°C VR= 540V TVJ=100°C VR=540V A 10 Qr 60 IF=60A IF=120A IF=60A IF=30A 8 50 6 max. IF=60A IF=120A IF=60A IF=30A IRM 40 40 30 4 typ. max. 20 20 2 typ. 10 0 0 1 2 3 V 0 0 10 4 Fig. 1 Forward current versus voltage drop. A/µs 1000 100 -diF/dt VF 400 TVJ=100°C VR=540V 1.2 0.8 trr 0.8 0.6 800 1000 A/µs Fig. 3 Peak reverse current versus -diF/dt. 1200 V ns 50 1000 VFR max. 1.0 IRM 600 60 1.0 µs Kf 200 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 0 IF=60A IF=120A IF=60A IF=30A 0.6 40 800 tfr VFR 30 600 20 400 0.4 QR 0.4 tfr 0.2 0.2 10 typ. 0.0 0 0.0 0 40 80 120 °C 160 0 TJ Fig. 4 Dynamic parameters versus junction temperature. TVJ=125°C IF=60A 200 400 600 -diF/dt A/µs 800 1000 Fig. 5 Recovery time versus -diF/dt. 0 200 400 600 diF/dt 200 0 800 1000 A/µs Fig. 6 Peak forward voltage versus diF/dt. Dimensions Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 2-2