DSEK60-06A

DSEK60-06A FRED VRRM = I FAV = 2x 30 A t rr = 35 ns 600 V Common Cathode Part number DSEK60-06A Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180227a DSEK60-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 700 V V VR = 600 V TVJ = 25°C 100 µA VR = 480 V TVJ = 125°C 7 mA IF = 37 A TVJ = 25°C 1.60 V IF = 74 A 1.81 V IF = 37 A 1.40 V IF = 74 A TVJ = 150 °C TC = 85 °C rectangular 1.63 V T VJ = 150 °C 30 A TVJ = 150 °C 1.01 V 7.1 mΩ d = 0.5 for power loss calculation only 1 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 22 pF TVJ = 25 °C 6 A TVJ = 100 °C 10 A TVJ = 25 °C 90 ns TVJ = 100 °C 170 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2018 IXYS all rights reserved 30 A; VR = 350 V -di F /dt = 240 A/µs 125 300 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20180227a DSEK60-06A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part No. Assembly Line Zyyww abcd Assembly Code Date Code Ordering Standard Ordering Number DSEK60-06A Equivalent Circuits for Simulation I V0 R0 V 0 max threshold voltage R0 max slope resistance * * on die level Delivery Mode Tube Quantity 30 Code No. 471534 T VJ = 150 °C Fast Diode 1.01 IXYS reserves the right to change limits, conditions and dimensions. © 2018 IXYS all rights reserved Marking on Product DSEK60-06A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20180227a DSEK60-06A Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2018 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20180227a DSEK60-06A Fast Diode 120 3.0 40 TVJ = 100°C VR = 350 V TVJ = 100°C VR = 350 V 100 2.5 IF = 37 A 74 A 37 A 18.5 A 30 80 IF 2.0 Qr 60 [A] [µC] TVJ = 150°C 100°C 25°C 40 IRM IF = 37 A 74 A 37 A 18.5 A 1.5 20 [A] 1.0 typ. 10 20 0.5 0 0.0 typ. 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 1 VF [V] 10 100 1000 0 -diF /dt [A/µs] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 1.4 20 600 0.5 1000 TVJ = 25°C IF = 37 A TVJ = 100°C VR = 350 V 1.0 400 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 0.6 1.2 200 -diF /dt [A/µs] 16 800 12 600 0.4 trr 0.8 Kf VFR max. 0.3 IRM 0.6 Qr 0.2 0.4 trr IF = 37 A 74 A 37 A 18.5 A [µs] [V] 400 [ns] VFR 4 0.1 0.2 8 trr 200 typ. 0.0 0.0 0 40 80 120 160 0 0 TVJ [°C] 200 400 600 -diF /dt [A/µs] 200 400 0 600 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 0 Fig. 6 Typ. peak forward voltage VFR and tfr versus -diF /dt 1.2 1.0 0.8 ZthJC 0.6 [K/W] 0.4 0.2 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180227a