DSEP12-12B

DSEP12-12B HiPerFRED VRRM = 1200 V I FAV = 12 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP12-12B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213e DSEP12-12B Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 150°C 0.5 mA IF = 15 A TVJ = 25°C 3.25 V IF = 30 A 3.96 V IF = 15 A 2.06 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. TVJ = 150 °C TC = 130 °C rectangular max. Unit 1200 V V 2.89 V T VJ = 175 °C 12 A TVJ = 175 °C 1.00 V 55 mΩ d = 0.5 for power loss calculation only 1.6 K/W 0.50 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 5 pF TVJ = 25 °C 14 A TVJ = 125 °C 23 A TVJ = 25 °C 70 ns TVJ = 125 °C 300 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 15 A; VR = 800 V -di F /dt = 500 A/µs 95 90 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200213e DSEP12-12B Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEP12-12B Similar Part DSEP12-12A DSEP15-12CR Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP12-12B Package TO-220AC (2) ISOPLUS247 (2) * on die level Delivery Mode Tube Code No. 501129 Voltage class 1200 1200 T VJ = 175°C Fast Diode V 0 max threshold voltage 1 V R0 max slope resistance * 52 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213e DSEP12-12B Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200213e DSEP12-12B Fast Diode 40 0.4 60 35 VR = 800 V 30 IF VR = 800 V 50 15 A 0.3 TVJ = 25°C 100°C 150°C 25 IF = 30 A TVJ = 125°C IF = 30 A TVJ = 125°C 40 15 A QR 20 IRM 0.2 7.5 A [µC] [A] 15 7.5 A 30 [A] 20 10 0.1 10 5 0 0 1 2 VF [V] 3 0.0 250 4 500 750 0 250 1000 1250 1500 -diF /dt [A/µs] Fig. 1 Forward current IF versus VF 500 IF = 30 A 750 1000 1250 1500 -diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 1.6 500 100 500 80 400 TVJ = 125°C VR = 800 V 400 1.2 VFR 15 A KF trr 300 0.8 [ns] IRM 0.4 Qrr 40 80 120 40 100 20 0 250 TVJ [°C] TVJ = 125°C VFR 0 500 750 1000 1250 1500 200 VR = 800 V 0 tfr 100 0 200 400 600 800 1000 1200 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 2000 IF = 15 A 200 160 [ns] TVJ = 125°C [V] 0.0 0 t f 300 60 7.5 A -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 2.0 IF = 30 A VR = 800 V 1600 1.6 15 A ZthJC 1200 1.2 Erec 7.5 A 800 Constants for ZthJC calculation: [K/W] 0.8 [µJ] 400 0.4 0 250 0.0 500 750 1000 1250 1500 -diF /dt [A/µs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 i Rthi (K/W) ti (s) 1 0.160 0.0010 2 0.100 0.0150 3 0.500 0.0040 4 0.840 0.1200 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200213e