DSEP15-03A

DSEP 15-03A HiPerFREDTM Epitaxial Diode IFAV = 15 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-220 AC C DSEP 15-03A A C (TAB) D4 A = Anode, C = Cathode, TAB = Cathode Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive TC = 25°C Md mounting torque Weight typical Symbol Conditions ① VF ② de mJ -55...+175 175 -55...+150 °C °C °C 95 W 0.4...0.6 fo No t IR A A r Ptot A A 0.3 ne w TVJ TVJM Tstg 35 15 2 Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 100 0.5 µA mA IF = 15 A; 1.21 1.68 V V 1.6 0.5 K/W K/W 30 ns TVJ = 150°C TVJ = 25°C RthJC RthCH trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % 2.7 Features si gn Symbol A • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG15I300PA IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 025 Data according to IEC 60747 and per diode unless otherwise specified 20080317a 1-2 DSEP 15-03A 40 500 20 TVJ = 100°C nC A VR = 150V 400 30 IF TVJ = 100°C A VR = 150V IRM Qr TVJ = 150°C 20 IF = 15A IF = 30A 300 TVJ = 100°C IF = 30A 15 IF = 7.5A IF = 15A TVJ = 25°C 10 IF = 7.5A 200 10 5 100 0 V 1 0 100 2 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 80 400 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt V VR = 150V 70 12 VFR 0.85 TVJ = 100°C IF = 15A Kf IF = 30A 60 1.0 VFR 10 IF = 15A µs 0.80 tfr tfr de trr 1.2 200 14 TVJ = 100°C ns 0 si gn 0 0.75 ne w IF = 7.5A IRM 50 Qr 0.8 30 0 40 80 120 °C 160 TVJ 200 400 10 K/W 0.70 6 0.65 4 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 5 Recovery time trr versus -diF/dt No t Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 fo 0.6 r 40 8 0.60 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.908 0.35 0.342 0.005 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 15-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values 2-2 025 Fig. 7 Transient thermal resistance junction to case © 2000 IXYS All rights reserved