DSEP 15-03A
HiPerFREDTM Epitaxial Diode
IFAV = 15 A
VRRM = 300 V
trr
= 30 ns
with soft recovery
VRSM
VRRM
V
V
300
300
Type
C
A
TO-220 AC
C
DSEP 15-03A
A
C (TAB)
D4
A = Anode, C = Cathode, TAB = Cathode
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 135°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
140
EAS
TVJ = 25°C; non-repetitive
IAS = 2.5 A; L = 180 µH
0.8
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
①
VF ②
de
mJ
-55...+175
175
-55...+150
°C
°C
°C
95
W
0.4...0.6
fo
No
t
IR
A
A
r
Ptot
A
A
0.3
ne
w
TVJ
TVJM
Tstg
35
15
2
Nm
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
100
0.5
µA
mA
IF = 15 A;
1.21
1.68
V
V
1.6
0.5
K/W
K/W
30
ns
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
trr
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
IRM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
2.7
Features
si
gn
Symbol
A
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Recommended replacement:
DPG15I300PA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
025
Data according to IEC 60747 and per diode unless otherwise specified
20080317a
1-2
DSEP 15-03A
40
500
20
TVJ = 100°C
nC
A
VR = 150V
400
30
IF
TVJ = 100°C
A
VR = 150V
IRM
Qr
TVJ = 150°C
20
IF = 15A
IF = 30A
300
TVJ = 100°C
IF = 30A
15
IF = 7.5A
IF = 15A
TVJ = 25°C
10
IF = 7.5A
200
10
5
100
0
V
1
0
100
2
0
A/µs 1000
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
80
400
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
V
VR = 150V
70
12
VFR
0.85
TVJ = 100°C
IF = 15A
Kf
IF = 30A
60
1.0
VFR
10
IF = 15A
µs
0.80
tfr
tfr
de
trr
1.2
200
14
TVJ = 100°C
ns
0
si
gn
0
0.75
ne
w
IF = 7.5A
IRM
50
Qr
0.8
30
0
40
80
120 °C 160
TVJ
200
400
10
K/W
0.70
6
0.65
4
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
No
t
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
0
fo
0.6
r
40
8
0.60
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
0.908
0.35
0.342
0.005
0.0003
0.017
0.1
0.01
0.001
0.00001
DSEP 15-03A
0.0001
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2
025
Fig. 7 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
很抱歉,暂时无法提供与“DSEP15-03A”相匹配的价格&库存,您可以联系我们找货
免费人工找货