DSEP29-06AS

DSEP29-06AS HiPerFRED VRRM = 600 V I FAV = 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP29-06AS Marking on Product: DSEP29-06AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190219c DSEP29-06AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 250 µA VR = 600 V TVJ = 150°C 1 mA IF = 30 A TVJ = 25°C 1.61 V IF = 60 A 1.94 V IF = 30 A 1.26 V IF = 60 A TVJ = 150 °C TC = 135 °C rectangular 1.56 V T VJ = 175 °C 30 A TVJ = 175 °C 0.91 V 9.4 mΩ d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 26 pF TVJ = 25 °C 6 A TVJ = 100 °C 10 A TVJ = 25 °C 35 ns TVJ = 100 °C 100 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 30 A; VR = 300 V -di F /dt = 200 A/µs 165 250 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20190219c DSEP29-06AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSEP29-06AS-TRL DSEP29-06AS-TUB Similar Part DSEP29-06A DSEP30-06A DSEP30-06B DSEP30-06BR Package TO-220AC (2) TO-247AD (2) TO-247AD (2) ISOPLUS247 (2) DHG30I600PA DHG30I600HA DHG30IM600PC TO-220AC (2) TO-247AD (2) TO-263AB (D2Pak) (2) Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP29-06AS DSEP29-06AS * on die level Delivery Mode Tape & Reel Tube Code No. 499498 473537 Voltage class 600 600 600 600 600 600 600 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.91 V R0 max slope resistance * 6.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190219c DSEP29-06AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190219c DSEP29-06AS Fast Diode 70 3000 60 50 TVJ = 100°C VR = 300 V TVJ = 100°C VR = 300 V 2500 TVJ = 150°C 100°C 25°C 50 40 IF = 60 A 30 A 15 A 2000 IF 40 Qr [A] 30 [µC] IRM 30 IF = 60 A 30 A 15 A 1500 [A] 20 1000 20 10 500 10 0 0.0 0.5 1.0 1.5 0 100 2.0 VF [V] Fig. 1 Forward current IF versus VF 0 1000 0 130 120 IF = 60 A 30 A 15 A 110 800 1000 20 1.2 15 0.9 VFR trr Kf 1.0 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 100°C VR = 300 V 1.5 400 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 100 IRM tfr TVJ = 100°C IF = 30 A 10 [ns] [V] 0.6 [µs] 90 0.5 5 Qr 70 40 80 120 160 tfr 0 0 200 400 600 800 1000 0 200 -diF /dt [A/µs] TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.3 VFR 80 0.0 0 200 -diF /dt [A/µs] 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190219c