DSEP2X31-04A

DSEP2x31-04A V RRM = 400 V I FAV = 2x 30 A t rr = 30 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x31-04A Backside: isolated Applications: Package: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current threshold voltage rF slope resistance u -o VR = 400 V 250 TVJ = 150 °C 1 mA TVJ = 25 °C 1.47 V 1.67 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ d = 0.5 TC = 105°C 30 A TVJ = 150°C 0.88 V 6.5 mΩ 1.15 K/W 150 °C TC = 25 °C 100 W TVJ = 45°C 280 A TVJ = 25 °C 11 A IF = TVJ = 100°C 18 A 30 A; VR = 200 V VR = 200 V; f = 1 MHz junction capacitance V V t = 10 ms (50 Hz), sine -di F /dt = 400 A/µs reverse recovery time 1.07 1.28 -40 p thermal resistance junction to case t rr TVJ = 150 °C for power loss calculation only T VJ Unit VR = 400 V rectangular R thJC max. V a average forward current typ. µA h I FAV VF0 min. 400 e forward voltage Ratings TVJ = 25 °C TVJ = 25 °C s VF t Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TVJ = 25 °C 20 ns TVJ = 100°C 65 ns TVJ = 25 °C 44 pF Recommended replacement: DPF60X400NA, DSEI2x31-04C IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x31-04A Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 °C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside 2500 V 10.5 3.2 mm 8.6 6.8 mm -o u t d Spp/App V abcde YYWW Z Part No. XXXXXX p h a Assembly Code DateCode Assembly Line s Logo e Product Marking Ordering Standard Part Name DSEP2x31-04A IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DSEP2x31-04A Delivering Mode Tube Base Qty Code Key 10 479020 Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x31-04A p h a s e -o u t Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x31-04A 70 50 1600 TVJ = 100°C TVJ = 100°C 60 VR = 200 V VR = 200 V 40 1200 50 IF = 60 A IF 40 TVJ = 150°C [A] 30 100°C 25°C Qr IF = 60 A IRM 30 30 A 15 A [A] 20 800 [nC] 20 30 A 15 A 400 10 10 0.5 1.0 1.5 0 100 2.0 0 1000 VF [V] Fig. 1 Forward current IF vs. VF 90 80 IF = 60 A 30 A 15 A trr Kf 1.0 70 IRM e [ns] 60 0.0 50 80 120 160 TVJ [°C] 200 400 15 0.6 10 0.4 VFR [V] TVJ = 100°C trr IF = 30 A [µs] 5 0.2 tfr 0 600 1000 800 1000 0 200 -diF /dt [A/µs] 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Recovery time trr versus -diF /dt Fig. 6 Peak forward voltage VFR and tfr versus diF /dt p h Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 a 40 800 VFR s Qr 600 Fig. 3 Peak reverse current IRM versus -diF /dt -o 1.5 400 u TVJ = 100°C VR = 200 V 0 200 -diF /dt [A/µs] Fig. 2 Reverse recovery charge Qr versus -diF /dt 2.0 0.5 0 -diF /dt [A/µs] t 0 0.0 1 ZthJC Constants for ZthJC calculation: 0.1 i [K/W] 0.01 0.001 0.0001 0.00001 Rthi (K/W) ti (s) 1 0.436 0.0055 2 0.482 0.0092 3 0.117 0.0007 4 0.115 0.0418 DSEP 2x 31-04A 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531a