DSEP2X60-12A

DSEP2x60-12A HiPerFRED VRRM = I FAV = 2x 60 A t rr = 40 ns 1200 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DSEP2x60-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610f DSEP2x60-12A Ratings Fast Diode Conditions Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current, drain current VR = 1200 V TVJ = 25°C 1 mA VR = 1200 V TVJ = 150°C 4 mA IF = TVJ = 25°C 2,42 V 2,84 V 1,52 V VF forward voltage drop min. 60 A typ. max. Unit 1200 V Symbol VRSM I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A TC = 80°C 1,92 V T VJ = 150°C 60 A TVJ = 150°C 1,15 V 6,2 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 48 pF I RM max. reverse recovery current TVJ = 25 °C 13 A TVJ = 100°C 20 A t rr reverse recovery time TVJ = 25 °C 85 ns TVJ = 100°C 250 ns rectangular for power loss calculation only 0,6 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,1 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 60 A; VR = 600 V -di F /dt = 200 A/µs 200 800 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610f DSEP2x60-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 100 Unit A TVJ virtual junction temperature -40 150 °C T op operation temperature -40 125 °C Tstg storage temperature -40 150 °C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air terminal to terminal 10,5 terminal to backside 8,6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3,2 mm 6,8 mm 3000 V 2500 V Product Marking Logo Date Code yywwZ ® XXXXX 123456 Location UL Ordering Standard Part Number Lot# Ordering Number DSEP2x60-12A Similar Part DSEP2x61-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP2x60-12A Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 495840 Voltage class 1200 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1,15 V R0 max slope resistance * 4,3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610f DSEP2x60-12A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 2 1 3 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610f DSEP2x60-12A Fast Diode 100 15.0 TVJ = 150°C Qr [A] 40 20 0 1 2 IF = 120 A IRM 60 A 30 A [A] 5.0 40 2.5 20 2.0 0 1000 60 A 30 A 0 200 60 VR = 600 V 260 IF = 120 A 60 A 30 A [V] 240 IF = 60 A 1.0 40 0.8 30 0.6 tfr [µs] 20 [ns] 220 Qr 1.2 TVJ = 100°C 50 VFR trr IRM 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 280 0.5 800 Fig. 2 Typ. reverse recov.charge Qr versus -diF /dt TVJ = 100°C Kf 1.0 600 -diF /dt [A/µs] 300 1.5 400 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF IF = 120 A 60 0.0 100 3 VR = 600 V 80 7.5 [µC] TVJ = 10°C 100 10.0 100°C 25°C IF 60 0 VR = 600 V 12.5 80 120 TVJ = 100°C tfr 10 0.4 0.2 VFR 0.0 0 40 80 120 160 200 0 200 400 600 800 1000 0 0 -diF /dt [A/µ s] TVJ [°C] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 ZthJC Constants for ZthJC calculation: 0.01 [K/W] 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 i Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610f