DSEP2X61-03A

DSEP2x61-03A HiPerFRED VRRM = I FAV = 2x 60 A t rr = 30 ns 300 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x61-03A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEP2x61-03A Ratings Fast Diode Conditions Symbol VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 IR reverse current, drain current VR = 300 V TVJ = 25°C 650 µA VR = 300 V TVJ = 150°C 2,5 mA TVJ = 25°C 1,51 V 1,82 V 1,11 V VF Definition IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 80°C rectangular max. Unit 300 V V 1,45 V T VJ = 150 °C 60 A TVJ = 150 °C 0,79 V 5,3 mΩ d = 0.5 for power loss calculation only 0,85 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 170 pF I RM max. reverse recovery current TVJ = 25 °C 12 A t rr reverse recovery time IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 0,1 TC = 25°C I F = 60 A; VR = 190 V -di F /dt = 600 A/µs 140 600 W A TVJ = 100°C 15 A TVJ = 25 °C 40 ns TVJ = 100°C 60 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEP2x61-03A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 min. typ. max. 100 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight MD MT d Spp/App d Spb/Apb VISOL g mounting torque 1,1 1,5 Nm terminal torque 1,1 1,5 Nm creepage distance on surface | striking distance through air terminal to terminal 10,5 terminal to backside 8,6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3,2 mm 6,8 mm 3000 V 2500 V Product Marking Logo Date Code yywwZ ® XXXXX 123456 Location UL Ordering Standard Part Number Lot# Ordering Number DSEP2x61-03A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP2x61-03A * on die level Delivery Mode Tube Code No. 476250 T VJ = 150 °C Fast Diode V 0 max threshold voltage 0,79 V R 0 max slope resistance * 3,4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEP2x61-03A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d DSEP2x61-03A Fast Diode 160 25 800 TVJ = 100°C TVJ = 100°C VR = 150 V VR = 150 V 20 120 600 TVJ = 150°C IF 100°C 25°C 80 Qr IF = 120 A 60 A 30 A 400 15 IRM 10 [nC] [A] 40 IF = 120 A 60 A 30 A [A] 200 5 0 0.0 0.5 1.0 1.5 0 100 2.0 VF [V] Fig. 1 Forward current IF versus VF 0 1000 0 -diF /dt [A/μs] 90 400 600 800 14 0.85 TVJ = 100°C VR = 150 V 1.2 1000 -diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 1.4 200 TVJ = 100°C IF = 60 A 12 0.80 VFR 10 0.75 [V] 8 0.70 80 1.0 trr 0.8 [ns] Kf IF = 120A IF = 60A IF = 30A 70 IRM [μs] 60 Qr 0.6 tfr 6 0.65 VFR 0.4 50 0 40 80 120 160 4 0 200 TVJ [°C] 400 600 800 1000 0 -diF /dt [A/μs] 200 400 600 800 0.60 1000 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ tfr Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 0.1 ZthJC Constants for ZthJC calculation: 0.01 [K/W] 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 i Rthi (K/W) ti (s) 1 0.307 0.0055 2 0.353 0.009 3 0.089 0.0007 4 0.101 0.04 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220608d