DSEP30-03A

DSEP 30-03A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-247 AD C DSEP 30-03A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 135°C; rectangular, d = 0.5 IFSM 70 30 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 0.8...1.2 Nm 6 g TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR ① VF ② Characteristic Values typ. max. VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 150°C 250 1 µA mA IF = 30 A; TVJ = 150°C TVJ = 25°C 1.14 1.55 V V 0.9 K/W K/W RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 25 IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 2.5 ns 3.5 Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages Outlines.pdf A Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 439 Data according to IEC 60747 and per diode unless otherwise specified. 1-2 DSEP 30-03A 60 800 30 TVJ = 100°C nC A VR = 150V IRM Qr 40 VR = 150V 25 600 IF TVJ = 100°C A 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A TVJ=100°C 400 IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0 0.0 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF vs. VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 90 trr 200 400 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 14 TVJ = 100°C ns 1.2 0 TVJ = 100°C V VR = 150V 80 IF = 30A VFR Kf 0.8 70 IRM 60 0.6 0.6 IF = 30A IF = 15A Qr 0.4 10 50 0.4 0.2 40 0 40 80 120 °C 160 8 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ tfr VFR IF = 60A 0.8 µs 1.0 tfr 12 1.0 1.2 Fig. 5 Recovery time trr versus -diF/dt 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 1 Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.01 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 439 Fig. 7 Transient thermal resistance junction to case 2-2