DSEP30-06BR

DSEP30-06A HiPerFRED VRRM = 600 V I FAV = 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP30-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEP30-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V V VR = 600 V TVJ = 25°C 250 µA VR = 600 V TVJ = 150°C 1 mA IF = 30 A TVJ = 25°C 1.60 V IF = 60 A 1.91 V IF = 30 A 1.25 V IF = 60 A TVJ = 150 °C TC = 135 °C rectangular 1.52 V T VJ = 175 °C 30 A TVJ = 175 °C 0.91 V 8.7 mΩ d = 0.5 for power loss calculation only 0.9 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 26 pF TVJ = 25 °C 6 A TVJ = 100 °C 10 A TVJ = 25 °C 35 ns TVJ = 100 °C 100 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 30 A; VR = 300 V -di F /dt = 200 A/µs 165 250 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20210118b DSEP30-06A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSEP30-06A Similar Part DSEP29-06A DSEP29-06AS DSEP30-06B DSEP30-06BR Package TO-220AC (2) TO-263AB (D2Pak) (2) TO-247AD (2) ISOPLUS247 (2) DHG30I600HA DHG30I600PA DHG30IM600PC TO-247AD (2) TO-220AC (2) TO-263AB (D2Pak) (2) Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP30-06A * on die level Delivery Mode Tube Code No. 471828 Voltage class 600 600 600 600 600 600 600 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.91 V R0 max slope resistance * 6.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEP30-06A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b DSEP30-06A Fast Diode 70 3000 60 VR = 300 V 2500 TVJ = 150°C 40 I F = 60 A 100°C 50 I F = 30 A 2000 25°C IF 40 Qr 30 I F = 15 A IRM 30 IF = 60 A 1500 [A] 50 TVJ = 100°C IF = 30 A [nC] [A] 20 IF = 15 A TVJ = 100°C 1000 20 VR = 300 V 10 500 10 0 0.0 0.5 1.0 1.5 0 100 2.0 0 1000 0 200 -diF /dt [A/µs] VF [V] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 1 Forward current IF versus VF 2.0 1.2 IF = 30 A 15 IF = 60 A 110 IF = 30 A trr 0.9 VFR IF = 15 A 100 tfr 10 0.6 [µs] [V] [ns] IRM 90 Qr 80 0.5 5 70 40 80 120 1000 TVJ = 100°C VR = 300 V 120 1.5 0 800 20 TVJ = 100°C 0.0 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 130 Kf 1.0 400 -diF /dt [A/µs] 160 trr 0 0 TVJ [°C] 200 400 600 800 1000 0 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.3 VFR 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b