DSEP30-06CR

DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 20 ns with soft recovery (Electrically Isolated Back Surface) VRSM VRRM V V C A Type ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 30-06CR A = Anode, C = Cathode * Patent pending Maximum Ratings IFRMS IFAVM IFRM TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 70 30 tbd IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive VISOL 50/60 Hz RMS; IISOL ≤ 1 mA FC mounting force with clip Weight typical Symbol Conditions No t ① A mJ -55...+175 175 -55...+150 °C °C °C 250 W 2500 V~ 20...120 N Applications 6 g • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits and PFC circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 µA mA VF ② IF = 30 A; 2.25 3.07 V V RthJC RthCH 0.6 with heatsink compound 0.25 K/W K/W trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 15 IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 2.5 IR • Silicon chip on Direct-Copper-Bond substrates - High power dissipation - Isolated mounting surface - 2500 V electrical isolation • Low cathode to tab capacitance (< 25 pF) • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 A ne w TC = 25°C A A A 0.3 fo Ptot r TVJ TVJM Tstg Features si gn Conditions de Symbol TVJ = 150°C TVJ = 25°C ns 3.5 A Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Dimensions see Outlines.pdf Recommended replacement: DPH30IS600HI IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 439 Data according to IEC 60747 and per diode unless otherwise specified 1-2 20080317a No t fo r ne w de si gn DSEP 30-06CR 1.0 K/W Constants for ZthJC calculation: i 1 2 3 ZthJC Rthi (K/W) ti (s) 0.31 0.1193 0.1707 0.005 0.0003 0.04 DSEP 30-06CR 0.1 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 439 Fig. 7 Transient thermal resistance junction to case 2-2