DSEP30-12A

DSEP30-12A HiPerFRED VRRM = 1200 V I FAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP30-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12A Ratings Fast Diode Conditions Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 250 µA VR = 1200 V TVJ = 150°C 1 mA IF = 30 A TVJ = 25°C 2,74 V IF = 60 A 3,27 V IF = 30 A 1,79 V IF = 60 A VF forward voltage drop min. typ. max. Unit 1200 V Symbol VRSM TVJ = 150 °C TC = 120°C V 2,30 V T VJ = 175°C 30 A TVJ = 175°C 1,12 V 16 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 8,5 A TVJ = 100°C 13 A t rr reverse recovery time TVJ = 25 °C 60 ns TVJ = 100°C 170 ns rectangular for power loss calculation only 0,9 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,25 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 30 A; VR = 600 V -di F /dt = 200 A/µs 165 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610d DSEP30-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 70 Unit A TVJ virtual junction temperature -55 175 °C T op operation temperature -55 150 °C Tstg storage temperature -55 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number yywwZ Date Code 1234 Lot# Location Ordering Standard Ordering Number DSEP30-12A Similar Part DSEP30-12B DSEP29-12A DSEP30-12AR DHG30I1200HA Package TO-247AD (2) TO-220AC (2) ISOPLUS247 (2) TO-247AD (2) DSEP30-12CR DSEP29-12B ISOPLUS247 (2) TO-220AC (2) Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP30-12A * on die level Delivery Mode Tube Code No. 473227 Voltage class 1200 1200 1200 1200 1200 1200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,12 V R0 max slope resistance * 13,4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12A Fast Diode 70 5 VR = 600 V 60 50 4 TVJ = 150°C 50 IF = 60 A 100°C 25°C IF = 60 A 30 IRM 30 [A] [µC] 2 20 20 1 10 0 0 1 2 3 10 0 100 4 Fig. 1 Forward current IF versus VF 1000 220 VR = 600 V 1.5 trr Kf 1.0 200 IF = 60 A 180 160 120 1000 1.2 TVJ = 100°C 1.0 IF = 30 A 80 0.8 60 0.6 40 0.4 tfr [µs] 20 0 200 400 600 800 -diF /dt [A/µs] 1000 0 0.2 trr VFR 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 800 [V] 140 QR 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt VFR 30 A 15 A IRM 0.5 400 100 [ns] 160 80 120 TVJ [°C] 0 120 TVJ = 100°C 200 40 VR = 600 V -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 0 0 TVJ = 100°C -diF /dt [A/µs] VF [V] 0.0 30 A 15 A 40 30 A 15 A Qr 3 IF 40 [A] 60 TVJ = 100°C Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d