DSEP30-12AR

DSEP30-12AR HiPerFRED VRRM = 1200 V I FAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP30-12AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12AR Ratings Fast Diode Conditions Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 250 µA VR = 1200 V TVJ = 150°C 1 mA IF = 30 A TVJ = 25°C 2,74 V IF = 60 A 3,27 V IF = 30 A 1,79 V IF = 60 A VF forward voltage drop min. typ. max. Unit 1200 V Symbol VRSM TVJ = 150 °C TC = 105°C V 2,30 V T VJ = 175°C 30 A TVJ = 175°C 1,12 V 16 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 8,5 A TVJ = 100°C 13 A t rr reverse recovery time TVJ = 25 °C 60 ns TVJ = 100°C 170 ns rectangular for power loss calculation only 1,1 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,25 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 30 A; VR = 600 V -di F /dt = 200 A/µs 135 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610d DSEP30-12AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 70 Unit A TVJ virtual junction temperature -55 175 °C T op operation temperature -55 150 °C Tstg storage temperature -55 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5,4 mm terminal to backside 4,1 mm t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 3600 V 3000 V Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSEP30-12AR Similar Part DSEP30-12A DSEP29-12A DHG30I1200HA DSEP30-12CR Package TO-247AD (2) TO-220AC (2) TO-247AD (2) ISOPLUS247 (2) DSEP30-12B TO-247AD (2) Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP30-12AR * on die level Delivery Mode Tube Code No. 481920 Voltage class 1200 1200 1200 1200 1200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,12 V R0 max slope resistance * 13,4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12AR Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b 2x b2 c Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 © 2022 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEP30-12AR Fast Diode 70 5 VR = 600 V 60 50 4 TVJ = 150°C 50 IF = 60 A 100°C 25°C IF = 60 A 30 IRM 30 [A] [µC] 2 20 20 1 10 0 0 1 2 3 10 0 100 4 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF 220 1000 IF = 60 A trr 180 Kf 1.0 140 40 80 120 TVJ [°C] 160 120 Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 400 600 800 -diF /dt [A/µs] 1000 1.2 TVJ = 100°C 1.0 IF = 30 A 80 0.8 60 0.6 40 0.4 tfr [µs] [V] IRM QR 0 Fig. 3 Typ. peak reverse current IRM versus -diF /dt VFR 30 A 15 A [ns] 160 0.5 VR = 600 V 100 200 1.5 TVJ = 100°C 120 TVJ = 100°C VR = 600 V 0 0 Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 0.0 30 A 15 A 40 30 A 15 A Qr 3 IF 40 [A] 60 TVJ = 100°C 20 0 200 400 600 800 -diF /dt [A/µs] 1000 0 0.2 trr VFR 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 10 1 Constants for ZthJC calculation: ZthJC 0.1 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.030 0.0005 2 0.100 0.0050 3 0.360 0.0200 4 0.610 0.0500 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d