DSEP40-03AS

DSEP40-03AS HiPerFRED VRRM = 300 V I FAV = 40 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP40-03AS Marking on Product: DSEP40-03AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP40-03AS Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 5 µA VR = 300 V TVJ = 150°C 0.1 mA IF = 40 A TVJ = 25°C 1.46 V IF = 80 A 1.85 V IF = 40 A 1.20 V IF = 80 A TVJ = 150 °C TC = 120 °C rectangular 1.63 V T VJ = 175 °C 40 A TVJ = 175 °C 0.72 V 10.7 mΩ d = 0.5 for power loss calculation only 0.85 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 50 pF TVJ = 25 °C 3.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 175 340 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP40-03AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSEP40-03AS-TRL DSEP40-03AS-TUB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP40-03AS DSEP40-03AS * on die level Delivery Mode Tape & Reel Tube Code No. 501174 525191 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.72 V R0 max slope resistance * 7.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP40-03AS Outlines TO-263 (D2Pak) Dim. W A Supplier Option D1 L1 c2 A1 H D E A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP40-03AS Fast Diode 60 0.5 16 14 50 IF = 60 A 30 A 15 A 0.4 40 TVJ = 150°C IF 125°C 30 10 0.3 [A] Qrr IRR [µC] [A] 0.2 25°C 0.1 0.8 1.2 VF [V] 1.6 TVJ = 125°C VR = 200 V 4 10 0.4 8 6 20 0.0 IF = 60 A 30 A 15 A 12 2.0 Fig. 1 Forward current IF versus forward voltage VF TVJ = 125°C VR = 200 V 0 100 200 300 400 -diF /dt [A/µs] 2 500 0 80 1.2 70 1.0 60 Kf 0.8 trr 50 [ns] 0.6 40 800 TVJ = 125°C VR = 200 V 200 300 400 -diF /dt [A/µs] 500 Fig. 3 Typ. reverse recovery current IRR versus -diF /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 100 tfr 16 TVJ = 125°C VR = 200 V IF = 30 A 700 14 12 600 IRR 0.4 500 IF = 60 A 30 A 15 A 30 Qrr 0.2 VFR 10 tfr 400 [ns] 8 300 6 200 4 100 2 VFR [V] 20 0 40 80 120 160 0 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 100 200 300 400 -diF /dt [A/µs] 500 0 200 300 400 -diF /dt [A/µs] 500 Fig. 6 Typ. forward recovery voltage VFR Fig. 5 Typ. reverse recovery time trr versus -diF /dt 14 100 & forward recovery time tfr vs. diF /dt 1 TVJ = 125°C VR = 200 V 12 10 IF = 15 A Erec [µJ] 8 30 A 60 A ZthJC [K/W] 6 4 Rthi [K/W] 0.139 0.176 0.305 0.23 2 0 100 200 300 400 -diF /dt [A/µs] 500 0.1 0.00 1 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.01 0.1 t [s] 1 ti [s] 0.00028 0.0033 0.028 0.17 10 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c