DSEP6-06BS

DSEP6-06BS preliminary HiPerFRED VRRM = 600 V I FAV = 6A t rr = 15 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06BS Marking on Product: P6QGUI Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 (DPak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP6-06BS preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 50 µA VR = 600 V TVJ = 150°C 0.2 mA IF = 6A TVJ = 25°C 2.66 V IF = 12 A 3.30 V IF = 6A 1.77 V IF = 12 A TVJ = 150 °C TC = 140 °C rectangular 2.29 V T VJ = 175 °C 6 A TVJ = 175 °C 1.13 V 76 mΩ d = 0.5 for power loss calculation only 2.8 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 5 pF TVJ = 25 °C 1.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.50 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 A; VR = 300 V -di F /dt = 200 A/µs 55 40 W A TVJ = 100 °C 3 A TVJ = 25 °C 15 ns TVJ = 100 °C 60 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP6-06BS preliminary Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature max. 20 Unit A -55 175 °C -55 150 °C -55 150 °C Product Marking Weight FC min. 0.3 20 mounting force with clip Logo Part number Assembly Line typ. g 60 N IXYS abcdefg Z YY WW Date Code Ordering Standard Alternative Ordering Number DSEP6-06BS-TRL DSEP6-06BS-TUB Similar Part DSEP6-06AS Equivalent Circuits for Simulation I V0 R0 Package TO-252AA (DPak) * on die level Delivery Mode Tape & Reel Tube Quantity 2500 70 Code No. 502162 525000 Voltage class 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1.13 R0 max slope resistance * 73 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product P6QGUI P6QGUI V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c DSEP6-06BS preliminary Outlines TO-252 (DPak) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20190220c