DSEP60-03A

DSEP 60-03A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type A C TO-247 AD C DSEP 60-03A A C (TAB) D4 Conditions Maximum Ratings IFRMS IFAVM TC = 110°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 700 A EAS TVJ = 25°C; non-repetitive IAS = 3.5 A; L = 180 µH 1.6 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A -55...+175 175 -55...+150 °C °C °C TC = 25°C 230 Md mounting torque Weight typical Symbol Conditions 0.8...1.2 6 W Nm g ① VF ② RthJC RthCH trr IRM Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM No t IR fo r Ptot ne w TVJ TVJM Tstg A A IF = 60 A; TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 300 A/µs; VR = 30 V; TVJ = 25°C 650 2.5 µA mA 1.25 1.71 V V 0.65 K/W K/W 0.25 30 VR = 100 V; IF = 130 A; -diF/dt = 100 A/µs TVJ = 100°C Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 de s 70 60 ns 4.8 A Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG 60I300HA 20071025a Symbol ig n A = Anode, C = Cathode, TAB = Cathode 1-2 DSEP 60-03A 160 800 25 TVJ = 100°C IF A nC 120 600 TVJ = 100°C A VR = 150V VR = 150V 20 IRM Qr TVJ=150°C IF = 120A IF = 60A IF = 30A TVJ=100°C 80 TVJ= 25°C 400 IF = 120A IF = 60A IF = 30A 15 10 40 200 5 0.5 1.0 1.5 V VF 2.0 Fig. 1 Forward current IF versus VF 0 100 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt IRM IF = 120A IF = 60A IF = 30A 70 0.8 ne Qr 60 0.6 50 40 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ K/W 0.1 ZthJC 200 400 IF = 60A 800 1000 A/µs VFR µs 0.75 8 0.70 6 0.65 0 200 400 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0.85 0.80 tfr 4 600 0.60 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: No t 1 0 fo 0 r 0.4 TVJ = 100°C tfr 10 w 1.0 Fig. 3 Peak reverse current IRM versus -diF/dt 12 VFR Kf 600 A/µs 800 1000 -diF/dt V VR = 150V trr 80 400 14 TVJ = 100°C ns 1.2 200 de s 90 1.4 0 ig n 0 0.0 i 1 2 3 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.005 0.0003 0.038 0.01 0.001 0.0001 0.00001 DSEP 60-03A 0.0001 0.001 0.01 s 0.1 1 Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 2-2 20071025a t © 2007 IXYS All rights reserved