DSEP60-12A

DSEP60-12A HiPerFRED VRRM = 1200 V I FAV = 60 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12A Ratings Fast Diode Conditions Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 650 µA VR = 1200 V TVJ = 150°C 2,5 mA IF = TVJ = 25°C 2,66 V 3,18 V 1,81 V VF forward voltage drop min. 60 A typ. max. Unit 1200 V Symbol VRSM I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A TC = 115°C V 2,40 V T VJ = 175°C 60 A TVJ = 175°C 1,08 V 9,4 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 30 pF I RM max. reverse recovery current TVJ = 25 °C 13 A TVJ = 100°C 20 A t rr reverse recovery time TVJ = 25 °C 80 ns TVJ = 100°C 220 ns rectangular for power loss calculation only 0,45 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,25 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 60 A; VR = 600 V -di F /dt = 200 A/µs 330 500 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610c DSEP60-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 70 Unit A TVJ virtual junction temperature -55 175 °C T op operation temperature -55 150 °C Tstg storage temperature -55 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number yywwZ Date Code 1234 Lot# Location Ordering Standard Ordering Number DSEP60-12A Similar Part DSEP60-12B DSEP60-12AR DHG60I1200HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP60-12A Package TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 477133 Voltage class 1200 1200 1200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,08 V R0 max slope resistance * 6,8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12A Fast Diode 100 10 TVJ = 150°C TVJ = 100°C TVJ = 25°C 80 100 TVJ = 100°C VR = 600 V TVJ = 100°C VR = 600 V 8 60 80 IF = 120 A IF = 60 A IF = 30 A 6 Qr IF 40 60 IRM 4 40 [µC] [A] 20 [A] 2 0 0 1 2 20 0 1 00 3 IF = 120 A IF = 60 A IF = 30 A 0 1000 0 200 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF 600 800 1000 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 280 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 120 1.2 TVJ = 100°C VR = 600 V TVJ = 100°C IF = 60 A 1.5 240 80 IF = 120 A IF = 60 A IF = 30 A trr Kf 1.0 VFR [ns] trr [µs] [V] 200 IRM 0.8 40 0.4 0.5 Qr trr VFR 0.0 160 0 40 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 0 200 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.5 0.4 Constants for ZthJC calculation: ZthJC 0.3 i Rthi (K/W) 1 0.0050 0.0001 2 0.0550 0.0010 3 0.1750 0.0140 4 0.2150 0.2300 [K/W] 0.2 0.1 ti (s) 0.0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c